ABOUT QORVO

Qorvo is a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications. Qorvo was formed following the merger of RFMD and TriQuint, and has nearly 7,000 global employees dedicated to delivering solutions for everything that connects the world. Qorvo has the industry's broadest portfolio of products and core technologies, semiconductor processing expertise and systems-level knowledge to solve the most difficult technical RF challenges, to connect and protect the world all around you. To learn more, visit www.qorvo.com.

FEATURED MARKETS

Defense and Aerospace Solutions

For over 30 years, Qorvo has enabled innovation for next-generation defense and aerospace communications systems. Qorvo products and technologies are at the core of many of the world's most advanced radar, space and electronic warfare (EW) systems. Innovations such as GaAs, GaN, SAW, BAW as well as integrated assembly, custom die-level packaging and expert engineering, help Qorvo to meet the world's mission-critical needs. In partnership with the US Department of Defense, DARPA and Research Laboratories and Qorvo's own R&D, we have engineered significant advantages in size, weight and power (SWaP) for our customers. Learn more, visit, DoD Category 1A 'Trusted Source'

GaN Innovation Solutions

Qorvo offers the industry’s broadest portfolio of GaN solutions supporting power and low noise amplifiers, switches and a large selection of power transistors. Qorvo is DoD accredited as a Microelectronics Trusted Source and is the only GaN manufacturer to achieve a Manufacturing Readiness Level (MRL) 9 demonstrating that its processes meet performance, cost and capacity goals to support full rate production.
 
Qorvo’s has shipped more than 1.8 million GaN devices since 2008 and demonstrated industry-leading reliability with a MTTF of greater than 70 million hours at 200°C. GaN RF solutions from Qorvo are enabling next-generation field technology by offering smaller, more efficient devices that can withstand the elements and continue operating reliably for military and commercial customers alike. To find how Qorvo’s GaN solutions are leading the industry in performance and reliability, visit www.qorvo.com/GaN

Brochure: Field-Proven GaN Solutions From Qorvo

FEATURED DOWNLOADS

  • GaN Thermal Analysis For High-Performance Systems
    GaN Thermal Analysis For High-Performance Systems

    This paper addresses Qorvo’s integrated approach to thermal design that leverages modeling, empirical measurements (including micro-Raman thermography), and finite element analysis (FEA) for high performance microwave GaN HEMT devices and MMICs. This methodology is highly effective and has been empirically validated. By properly addressing FEA boundary condition assumptions and the limitations of infrared microscopy, resulting model calculations are more accurate at both the product and end application level than traditional methods based on lower power density technology.

  • GaN Solutions Brochure
    GaN Solutions Brochure

    Qorvo has offered a broad range of innovative gallium nitride (GaN) products and technologies over the past 15 years. Their high-performance GaN technology supports products operating from the DC through Ka-band. With proven reliability at high junction temperatures, Qorvo provides products with excellent noise figures, high power handling, and high thermal conductivity. Qorvo is also accredited with many foundry processes including post-processing, packaging/assembly and test services that support the high-frequency standard portfolio.

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NEW PRODUCTS

  • Ku-Band GaN PA / Driver Amplifier: TGA2958-SM

    The TGA2958-SM is a GaN PA/driver amplifier operating in the Ku-band, providing 2W of saturated output power, and has greater than 21 dB of large signal gain. These amplifiers are designed and manufactured on TriQuint’s GaN on SiC production process that provides superior performance while maintaining high reliability.

  • 2-22 GHz Highly Robust GaN LNA: TGA2227-SM
    2-22 GHz Highly Robust GaN LNA: TGA2227-SM

    The TGA2227-SM is a highly robust GaN Low-Noise Amplifier (LNA) covering the 2-22 GHz frequency range, and delivers >15 dB small signal gain and >+22 dBm P1dB while supporting 2 dB mid-band Noise Figure. This LNA offers a high overall electrical performance, and a high level of input power robustness for more design flexibility in the receive chain circuit protection.

  • S-Band High-Power Limiter: TGL2927-SM
    S-Band High-Power Limiter: TGL2927-SM

    The TGL2927-SM is a high-power, GaN receiver protection circuit (limiter) covering the 2-4 GHz frequency range, is capable of withstanding up to 200W incident power levels, and allows less than 18 dBm flat leakage to pass through. This limiter doesn’t require bias, and contributes less than 0.6 dB in insertion loss.  

  • Low-Band High-Power Limiter: TGL2210-SM
    Low-Band High-Power Limiter: TGL2210-SM

    Qorvo offers a new high-power receive protection circuit, or limiter, that is capable of withstanding up to 100 W incident power levels. This limiter operates in the 0.05 to 6 GHz frequency range, and permits less than 17 dBm flat leakage to pass through while contributing less than 0.7 dB in insertion loss.

  • Ka-Band Doubler with 1W Multi-stage Amplifier: TGC4603-SM
    Ka-Band Doubler with 1W Multi-stage Amplifier: TGC4603-SM

    The TGC4603-SM is a device comprised of a frequency doubler and a multi-stage amplifier designed for operation in the 13.5 – 16 GHz frequency range. This instrument is able to achieve more than 1 Watt of output power at only 3 dBm input power due to more than 70 dBc isolation between the input and doubled output frequency.

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CONTACT INFORMATION

Qorvo

7628 Thorndike Road

Greensboro, NC 27409

UNITED STATES

Phone: 336-664-1233

Contact: Sales

FEATURED ARTICLES

  • Utilizing GaN MMICs And Coaxial Waveguide Spatial Power Combining In Power Amplifiers

    Solid state amplifiers can now be constructed through the use of MMIC amplifiers to reach output powers and performance levels that have only been achievable by traveling wave tube amplifiers (TWTAs). These new high efficiency power amplifiers are designed to incorporate an antipodal finline antenna array within a coaxial waveguide that is optimized in the Ka Band. This white paper demonstrates building a 120 Watt power amplifier operating from 27 to 31 GHz through the use of a coaxial waveguide combiner structure joined with 10 Watt GaN MMIC devices.

  • Carrier Aggregation In Mobile Devices
    Carrier Aggregation In Mobile Devices

    Carrier aggregation (CA) enables mobile network operators worldwide to provide faster data, and allows mobile devices to communicate on multiple LTE bands simultaneously. This, however, creates the challenge of avoiding interference between the bands while keeping up good reception and battery life. Multiplexers are an excellent solution for CA combinations that use closely spaced bands since they provide isolation between and within bands, while allowing them to connect to the antenna at the same time. This white paper discusses the challenges of carrier aggregation, and the important benefits of using multiplexer solutions to solve them.

  • Qorvo Spatium SSPA Technology Brochure
    Qorvo Spatium SSPA Technology Brochure

    Qorvo’s offers patented Spatium RF power combining technology to provide a highly reliable, efficient alternative to traveling wave tube amplifiers (TWTAs) for commercial and defense communications, radar, electronic warfare (EW), and other defense systems. 

  • Advanced Filter Solutions
    Advanced Filter Solutions

    The average number of frequency bands in mobile devices has more than doubled in the last few years. Qorvo is leveraging its filter technologies, such as NoDrift and LowDrift BAW and SAW, to create filters, duplexers, and multiplexers to tackle the challenges of 4G and 5G mobile devices.

  • RF Architecture Choices For Next-Generation Handset Designs
    RF Architecture Choices For Next-Generation Handset Designs

    Today’s smartphone market has expanded into several categories with differing design goals and priorities, which require different approaches to RF front end (RFFE) integration. Modern packaging techniques make it possible to combine multiple RFFE components into integrated modules which help smartphone manufacturers accelerate the design and manufacture of new handsets. However, since there are two key smartphone categories – flagship phones and mid-tier and entry-level handsets – it raises the question of what would be the right level of RFFE integration and the best integration approach for each one?

  •  Addressing Carrier Aggregation Challenges Using Multiplexer Solutions
    Addressing Carrier Aggregation Challenges Using Multiplexer Solutions

    How do operators avoid interference between bands while minimizing insertion loss? Multiplexers. They are designed to integrate the required filters for multiple aggregate bands, provide isolation within and between the bands, and allow them to simultaneously connect to the antenna. 

  • Advanced RF Filters For V2V And Other Automotive Applications
    Advanced RF Filters For V2V And Other Automotive Applications

    This white paper discusses three key filtering challenges addressed by BAW filter technology: 802.11p in the DSRC band, LTE-Wi-Fi coexistence, and satellite radio. It also examines reliability and temperature stability considerations specific to automotive use. 

  • GaN Solutions Brochure
    GaN Solutions Brochure

    Qorvo has offered a broad range of innovative gallium nitride (GaN) products and technologies over the past 15 years. Their high-performance GaN technology supports products operating from the DC through Ka-band. With proven reliability at high junction temperatures, Qorvo provides products with excellent noise figures, high power handling, and high thermal conductivity. Qorvo is also accredited with many foundry processes including post-processing, packaging/assembly and test services that support the high-frequency standard portfolio.

  • Gallium Nitride – A Critical Technology For 5G
    Gallium Nitride – A Critical Technology For 5G

    While today’s carrier networks are better than previous generations, providers have a lot of ground to cover to reach the goals promised with 5G technology. In addition to being “greener” for the environment, 5G has goals of 1 ms latency, 100 x network energy efficiency, 20 Gbps peak data rates, and 10 Mps/m2 area traffic capabilities. So, how do we achieve the RF chain 5G objectives and meet ‘green’ network goals? This article discusses how RF Gallium Nitride (GaN) technology can be used for emerging 5G technologies.

  • What Is The Real Value Of IoT?

    The name “Internet of Things” (IoT) can be misleading in that it does not actually refer to a specific group of things. It really isn’t a new concept either, rather a maturing technology that is making its way into the mainstream eye. Just like every other universally connected device, it operates over our regular internet with familiar applications in wearables and the smart home. So what is the real value of IoT? This white paper provides information on what the IoT has to offer now and in the future, and what defines its true value.

  • What Is SHaaS? And Why Should You Care?

    Comcast released the results of a survey from earlier this year providing valuable insights into why consumers are interested in smart home services, what features are most desired, and how they plan to use smart home technologies. The biggest find of the survey is that consumers are more interested in a smart home as a service (SHaaS) over connected devices that remotely control devices in the home. This application note discusses SHaaS, its components, and how it works.

  • Energy Efficiency In The Telecommunications Network
    Energy Efficiency In The Telecommunications Network

    The telecommunications sector accounts for roughly 4 percent of the global electricity consumption. However, the sector is actively participating in efforts to reduce energy use – both for economic reasons, such as reducing operating expenses, and for environmental reasons.

  • CW Operation Of QFN-Packaged Pulsed GaN Power Amplifiers

    Improvements have been made to GaN amplifiers at microwave frequencies that have increased their generated output power levels while also shrinking the size of the system. These developments, however, present the challenge of providing sufficient thermal management. This Qorvo® application note discusses the thermal issues involved with using high-powered, small packaged (e.g. QFN) GaN amplifiers within high power CW systems. Download the full paper for considerations on component mounting in order to provide a low thermal impedance path to the system heat sink for optimum operation and reliability, using the TGA2307-SM as an example.

  • Small Cell Network Congestion And Efficiency Solutions Brochure
    Small Cell Network Congestion And Efficiency Solutions Brochure

    Carriers are able to deploy more spectrum range, add capacity, and improve cell edge performance through the densification of small cell outdoor technologies. Since small cells differ in power level, geographical coverage, regional band allocation, and the number of users serviced, OEMs must produce their own small cells to accommodate several stock keeping units. Qorvo offers innovative RF solutions such as filters, amplifiers, switches, and antenna tuning devices that enable customers to meet their design requirements for small cell applications.

  • Connecting The $11 Billion Asset Management Market
    Connecting The $11 Billion Asset Management Market

    The cellular machine-to-machine value-added services market is poised to dominate the transportation, utility, eHealth, and emerging IoT markets. With a market value estimated to exceed $11 billion by 2020, CSPs and device manufacturers will benefit by deploying tools and services enabling a secure M2M VAS communication network.

  • On The Road To Seamless Connectivity, Wi-Fi Has No Speed Limits
    On The Road To Seamless Connectivity, Wi-Fi Has No Speed Limits

    Consumers expect a high standard of network connectivity. Even though our global data consumption has risen from petabytes per month to exabytes per month, users do not want to experience any issues. While Wi-Fi is used to offload the cellular network, high-demand applications continue to cause strain, and smartphone manufacturers continue to pressure carriers to make network enhancements to offload data traffic. 

  • Gallium Nitride RF Devices From Qorvo For Harsh Military Environments

    Today’s advanced military systems – including phased array radar, communications systems and EW sensors – require high-frequency, high-bandwidth, high-power, high-efficiency devices. These applications are where GaN differentiates itself from other materials. GaN devices can operate at higher bias voltages, which provides several advantages at both the system/subsystem and circuit level, leading to a proportional decrease in current requirement for the circuit. The bottom line: GaN improves the system-level trade-off of size, weight, and power.

  • 4G LTE Accelerates Growth of Radio Frequency Filters
    4G LTE Accelerates Growth of Radio Frequency Filters

    Factors driving the explosive growth of the RF filter market include crowded spectrum, explosive proliferation of frequency bands, and carrier aggregation. Thus, engineers must consider many criteria when selecting filters. 

  • Go GaN – Go Green
    Go GaN – Go Green

    We hear in many articles that GaN technology is “more green” than current Si- or CMOS-based technologies. But, what does this really mean? This guest column breaks GaN’s environmental friendliness down into two distinct areas - lower installation cost and lower system-level operating costs.

  • GaN Thermal Analysis For High-Performance Systems
    GaN Thermal Analysis For High-Performance Systems

    This paper addresses Qorvo’s integrated approach to thermal design that leverages modeling, empirical measurements (including micro-Raman thermography), and finite element analysis (FEA) for high performance microwave GaN HEMT devices and MMICs. This methodology is highly effective and has been empirically validated. By properly addressing FEA boundary condition assumptions and the limitations of infrared microscopy, resulting model calculations are more accurate at both the product and end application level than traditional methods based on lower power density technology.