Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.
All GaN on SiC HEMT devices are constructed with Qorvo QGaN25HV process which includes advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The process can potentially lower system costs in terms of fewer amplifier line-ups and reduced thermal management costs. All GaN power transistors are lead free and ROHS compliant.
For more specifications, features, and parameters for specific models, download the available datasheets, or contact Qorvo.