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  1. Selecting RF Power Amplifiers For Military Communications And Electronic Warfare 7/27/2026

    Examine RF power amplifier selection for military communications and electronic warfare, covering modulation techniques, GaN-on-SiC technology, and key performance criteria.

  2. 20 - 500 MHz, 1000 W Solid State High Power Amplifier: AMP20052 Datasheet 7/20/2026

    The Exodus AMP20052 is a Class A/AB solid-state high-power amplifier delivering 1000 W minimum output power with 60 dB gain across an instantaneous bandwidth of 20 to 500 MHz.

  3. 20 - 500 MHz, 1000 W Solid State High Power Amplifier: AMP20052 7/20/2026

    The Exodus AMP20052 is a Class A/AB solid-state high-power amplifier delivering 1000 W minimum output power with 60 dB gain across an instantaneous bandwidth of 20 to 500 MHz.

  4. MT2000: High‑Power (1 kW) Harmonic Load Pull For GaN Devices 7/9/2026

    Learn how the MT2000 enables accurate 1 kW GaN harmonic load pull measurements using hybrid impedance synthesis for faster, safer, and more efficient amplifier characterization.

  5. MT2000: Unlocking PA Efficiency Through 3rd Harmonic Load Pull 7/9/2026

    Discover how third harmonic load pull improves GaN power amplifier efficiency, enabling faster characterization, better models, and optimized RF performance with the MT2000.

  6. Testing Regenerative And Transparent 5G NTN Architectures With The ACE9600 7/9/2026

    Learn how the ACE9600 emulates dynamic 5G NTN satellite channels to validate regenerative and transparent architectures before deployment with realistic, repeatable laboratory testing.

  7. MT2000: Double Pulse Load Pull For Trapping Characterization Of GaN Transistors 7/9/2026

    RF Double Pulse Load Pull on the MT2000 reveals GaN transistor trapping effects, enabling accurate characterization of dynamic performance, model validation, and power amplifier optimization.

  8. 8.5-10.5GHz 10W Transmit/Receive Module: QPF5012 6/18/2026

    QPF5012 is a multi-die front-end module (FEM) designed for 8.5-10.5GHz X-Band applications. The FEM integrates T/R switch, limiter, low-noise amplifier, and power amplifier.

  9. 25W, 30-1200 MHz, GaN RF Input-Matched Transistor: QPD1004A Datasheet 5/26/2026

    QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz.

  10. 25W, 30-1200 MHz, GaN RF Input-Matched Transistor: QPD1004A 5/26/2026

    QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz.