By Roger Hall, Qorvo
While some feel GaN is still a relatively new technology, many can't dispute how it's advanced to the head of the class. AKA, Gallium Nitride, GaN is a technology on the cusp of dethroning silicon LDMOS, which has been the material of choice in high power applications. GaN is a direct bandgap semiconductor technology belonging to the III-V group. It is increasingly being used in power electronics because of its higher efficiency, superior high-voltage sustainability, reduced power consumption, higher temperature attributes, and power-handling characteristics.
These attributes have thrust GaN into the 5G RF spotlight – especially when it comes to mmWave 5G networks. And, while we all have 'heard' the promises of 5G, today, many of us in big cities – about 5 million of us to be more precise – are starting to realize those promises as major wireless carriers roll 5G out to their customers. But we are not there yet. Not even close. The goal is to connect 2.8 billion users by 2025. To reach this goal means to revamp the entire mobile infrastructure – a complex undertaking. But it can be done. And with the help of GaN technology, 5G will be in billions of people's hands before you know it.