1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L Datasheet

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. With an industry standard air cavity package and support of both CW and pulsed operations, the QPD1025L is ideally suited for IFF, avionics, and test instrumentation applications.  For additional features and specifications, download the datasheet.