Application Note

Gen 4 SiC FETs Extend Performance Leadership While Enabling New Levels Of Design Flexibility

Source: Qorvo
Gen 4 SiC FETs Extend Performance Leadership While Enabling New Levels Of Design Flexibility

UnitedSiC (now Qorvo) has expanded its breakthrough Gen 4 SiC FET portfolio, extending performance leadership with a 750V/6mOhm SiC FET offered in a TO-247 4-lead package and down to an on-resistance of 9mOhm in a D2PAK-7L surface mount package.

The new SiC FETs offers the industry’s lowest rated RDS(on) in standard discrete packages and are the only ones in their class to offer robust short circuit withstand time rating of 5µs. Download the application note to learn more.

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