Datasheet | November 3, 2022

GaN RF Input-Matched Transistor: QPD1025L Datasheet

Source: Qorvo

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Key Features

  • Frequency Range: .96- 1.215 GHz

  • Output Power (P3dB1): 1862 Watt

  • Linear Gain1: 22.5 dB

  • Typical PAE3dB1 77.2 %

  • Operating voltage: 65 V

  • CW and Pulse capable

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