White Paper

Designing A Broadband L-band 160 W GaN Power Amplifier Using SMT Packaged Transistors

Source: Qorvo

By J. M. Greene, R. M. H. Smith, L. M. Devlin, R. Santhakumar, R. Martin of Plextek RFI, Cambridge, UK and Qorvo Inc., Richardson, TX, USA

Designing A Broadband L-band 160 W GaN Power Amplifier Using SMT Packaged Transistors

Advancements in Gallium Nitride technologies are leading to amplifier operation at higher powers, supply voltages, and frequencies. Qorvo details the design of a broadband power amplifier using state-of-the-art transistors in SMT plastic packages. The whitepaper includes load-pull measurements, thermal considerations, and EM simulations of the input/output matching networks. Download the full paper for more information on the design process.

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