Delivering Big Switching Power In A Small Package With SiC FETs

New semiconductor switch technologies arrive occasionally, but every so often, they can have seismic impacts when they hit the market. Device technologies using wide band-gap materials, like silicon carbide (SiC) and gallium nitride (GaN), have certainly done that. These wide band-gap technology materials provide step improvements in power conversion efficiency and size reduction compared with traditional silicon-based part offerings.

With the new ability of size reduction using SiC, Qorvo’s SiC-FET technology has extended its lead in developing a 750V device with a TO-Leadless (TOLL) package. So, what does one get in such a small TOLL package, and how does it benefit your design? That is exactly what we will be digging into below.