Asymmetric Doherty Amplifier: QPD0012
Source: Qorvo
The QPD0012 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for Doherty application.
Applications include 5G Massive MIMO, WCDMA/LTE, Microcell Base Station, Small Cell, Active Antenna, and Asymmetric Doherty Applications.
Product Features Include:
- 2500 – 2700 MHz
- Operating Drain Voltage: +48V
- Peak Doherty Output Power: 47.3dBm
- Doherty Drain Efficiency at 38.8dBm: 59%
- Doherty Gain at 38.8 dBm: 14.8dB
- 7.0 x 6.5mm DFN package
This product is currently in production.
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