Advancing Wideband RF Power: Next-Generation GaN-on-SiC SSPAs Optimize SWaP-C And Mission Reliability

Across defense and aerospace platforms, RF power requirements are intensifying. Modern radar, SATCOM, electronic warfare (EW), and high-duty test systems must deliver higher output power, broader bandwidth, improved linearity, and greater reliability—all while meeting strict size, weight, power, and cost (SWaP-C) constraints. Legacy traveling wave tube amplifiers (TWTAs) and older solid-state designs increasingly struggle to meet these demands, particularly as supply chain risks and lifecycle expectations grow.

Next-generation systems operate across S- through Ka-bands and must support continuous-wave and high-duty-cycle performance without sacrificing thermal efficiency. At the same time, integrators face mounting pressure to reduce subsystem complexity, shorten qualification timelines, and improve long-term maintainability.

Wideband GaN-on-SiC solid-state power amplifiers (SSPAs) are emerging as a compelling solution. Technologies from Qorvo demonstrate how advanced GaN architectures can deliver high power density, improved thermal performance, and rugged reliability in compact, integrated modules. With built-in bias control, integrated driver stages, and pre-aligned RF chains, modern SSPAs simplify system integration while reducing external components and potential failure points.

Compared to legacy TWTAs, these solutions can significantly reduce system size and weight while improving mean time between failures (MTBF) and long-term availability. As defense programs modernize RF infrastructures, efficient, broadband, and highly integrated GaN-based SSPAs are defining the next generation of mission-ready radar, EW, SATCOM, and test platforms.