The ADMV4928 is a silicon on insulator (SOI), 37.0 GHz to 43.5 GHz, mmW 5G beamformer. The RF integrated circuit (RFIC) is highly integrated and contains 16 independent transmit and receive channels. The ADMV4928 supports eight horizontal and eight vertical polarized antennas via independent RFV and RFH input/outputs.
Qorvo's QPA1010, QPA1010D are X-band high power MMIC amplifiers, fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). These amplifiers operate from 7.9 - 11 GHz and typically provide 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB.
The Model 750S1G6C is a solid-state, Class A design, self-contained, air-cooled, broadband power amplifier designed for applications where instantaneous bandwidth, high gain, and linearity are required.
The ADRF5515A is a dual-channel, integrated RF, front-end, multichip module designed for time division duplexing (TDD) applications. The device operates from 3.3 GHz to 4.0 GHz. The ADRF5515A is configured in dual channels with a cascading, two-stage low noise amplifier (LNA) and a high-power silicon singlepole, double-throw (SPDT) switch.
The ADMV4828 is a silicon on insulator (SOI), 24.0 GHz to 29.5 GHz, mmW 5G beamformer. The RF integrated circuit (RFIC) is highly integrated and contains 16 independent transmit and receive channels. The ADMV4828 supports eight horizontal and eight vertical polarized antennas via independent RFV and RFH input/outputs.
The QPA9831 is a Hybrid Push Pull amplifier module. The part employs GaAs MESFET, GaAs pHEMT and GaN HEMT die and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.
The QPA2513 is a 2-stage S-Band internally matched GaN Power Amplifier Module. The QPA2513 operates at pulsed RF CW in frequency range 3.1 -3.5 GHz providing typically 51dBm of saturated output power with 30dB of large-signal gain and 62% of power added efficiency.