Product Showcase
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4 Watt High-Efficiency Amplifier: QPA9909
8/17/2022
The QPA9909 is a high-efficiency, linearizable power amplifier targeting 758MHz – 798MHz small-cell wireless infrastructure systems. The product delivers +29dBm output power for signals up to 40MHz.
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Non-Magnetic Surface Mount And Ribbon Leaded MLC Capacitors
8/11/2022
The use of a copper barrier instead of a nickel barrier, with a tin finish on top, is the solution Knowles Precision Services has developed for non-magnetic applications.
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C-Band Power Amplifier: QPA0506
8/9/2022
Qorvo's QPA0506 is a 4-watt MMIC power amplifier. Covering 5-6 GHz, the QPA0506 typically provides 36dBm of saturated output power and 18dB of large-signal gain with 53% power-added efficiency.
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Discrete Transistor: QPD2025D
7/20/2022
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process.
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RF And Microwave Filter Capabilities
7/19/2022
Knowles Precision Devices offers filter technology spanning from VHF to V Band. Additional options include 300 MHz to 75 GHz in Bandpass, Lowpass, Highpass and Bandstop configurations.
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SP4T Switch For LTE Applications: QPC8013Q
6/29/2022
The QPC8013Q is a low loss, high isolation SP4T switch with performance optimized for LTE and diversity applications. The QPC8013Q is packaged in an ultra compact 1.1 mm x 1.9 mm x 0.44 mm, 13-pin, Module package which allows for the smallest solution size with no need for external DC blocking capacitors (when no external DC is applied to the device ports).
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6 GHz Wi-Fi 6E Medium Power Front End Module: QPF4632
6/29/2022
The Qorvo® QPF4632 is an integrated front end module (FEM) designed for Wi-Fi 6 & 6E (802.11ax) systems. The small form factor and integrated matching minimizes layout area in the application.
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Die On Carrier, Silicon Digital Attenuator: ADRF5474
6/17/2022
The ADRF5474 is a 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized and connected to ground.
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GaN Power Amplifier Module: QPA3908
5/20/2022
The QPA3908 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 8 W RMS at the device output covering frequency range from 3.7 to 3.98 GHz.
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S1G6C Series Amplifiers
5/6/2022
S1G6C models are Class A, solid-state, self-contained, air-cooled, broadband amplifiers designed for applications where instantaneous bandwidth, high gain, and linearity are required. They protect against input overdrive beyond 0 dBm and various failure conditions, including over-temperature and power supply faults.