Product Showcase
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High Power GaN SP3T Switch: QPC1006
11/3/2022
Qorvo’s QPC1006 is a Single-Pole, Triple–Throw (SP3T) switch fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process.
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GaN RF Input-Matched Transistor: QPD1025L
11/3/2022
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.
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GaN RF IMFET: QPD1018
11/3/2022
The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail.
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GaN RF Transistor: QPD1016
11/3/2022
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply.
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Antenna Test Chamber For Automotive Radar: ATS1500C
10/25/2022
The R&S® ATS1500C antenna test chamber is a compact antenna test range (CATR), consisting of a gold-plated parabolic reflector and a two-axis positioner for 3D movements of the DUT.
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High Linearity Power Amplifier: GRF5521
10/25/2022
The GRF5521 is a high gain, two-stage InGaP HBT power amplifier designed to deliver excellent P1dB, ACLR and IM3 performance the 2110 to 2170 MHz band.
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R&S MXO 4 Series Oscilloscopes
10/18/2022
The R&S® MXO 4 series is the first of a new generation of oscilloscopes that excels in both performance and value. The instruments deliver a once-in-a-decade engineering breakthrough for accelerated insight.
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S-Band GaN Driver Amplifier: QPA2935
9/28/2022
The QPA2935 is a MMIC power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN-on-SiC production process. The QPA2935 typically provides 33 dBm of saturated output power and 18 dB of large-signal gain.
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GaN RF Pallet: QPD1034
9/27/2022
The Qorvo QPD1034 is a 1700W (P3dB) GaN pallet that operates from 0.96 to 1.215 GHz. Fully matched to 50 Ohms, it is easy to use and provides ease of board integration.
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SiC Power Amplifier: QPA2511
9/27/2022
The QPA2511 is a two-stage L-band internally matched GaN power amplifier module that operates at pulsed RF CW in frequency range 1.2-1.4 GHz providing 50 dBm of saturated output power with 29 dB of large-signal gain.