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GaN Thermal Analysis For High-Performance Systems
1/21/2015
This paper addresses Qorvo’s integrated approach to thermal design that leverages modeling, empirical measurements (including micro-Raman thermography), and finite element analysis (FEA) for high performance microwave GaN HEMT devices and MMICs. This methodology is highly effective and has been empirically validated. By properly addressing FEA boundary condition assumptions and the limitations of infrared microscopy, resulting model calculations are more accurate at both the product and end application level than traditional methods based on lower power density technology.
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GaN Solutions Brochure
8/23/2017
Qorvo has offered a broad range of innovative gallium nitride (GaN) products and technologies over the past 15 years. Their high-performance GaN technology supports products operating from the DC through Ka-band.