Product/Service

ARF475FL - VHF Power RF MOSFET

Source: Microsemi Corporation
The ARF475FL utilizes a newly-patented process and finer geometry that delivers much higher peak power and RF gain than previous high voltage parts. They operate reliably at DC voltages up to 165 volts. The ARF475FL uses two die, configured for push-pull operation, in the new T3 Flangeless package and is capable of 1000W pulsed output and 300W CW at up to 150 MHz...
The ARF475FL utilizes a newly-patented process and finer geometry that delivers much higher peak power and RF gain than previous high voltage parts. They operate reliably at DC voltages up to 165 volts. The ARF475FL uses two die, configured for push-pull operation, in the new T3 Flangeless package and is capable of 1000W pulsed output and 300W CW at up to 150 MHz.

The ARF475FL is available in the new flangeless T3 package. This package lowers thermal resistance and cost compared to ceramic packages with a copper tungsten flange. To obtain the high power dissipation, the backside of the package is lapped to provide an optimum thermal interface surface to mate with the system heat sink. Power cycle results in typical applications have been demonstrated beyond 1 million cycles with a power density of 700 Watts/sq. inch. The coplanar lead arrangement facilitates circuit layout and provides over 2500 volts isolation between any terminal and the mounting surface.

Applications for these devices include MRI, CO2 Laser RF sources and RF Plasma generators up to 150 MHz; as well as broadband linear amplifiers for 1.5 to 60 MHz.

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