RFHIC Introduces GaAs p-HEMT LNA For S-band Applications

RFHIC, a manufacturer of gallium nitride and gallium arsenide active RF Microwave components and hybrid modules, announces the release of ceramic substrate based GaAs p-HEMT Hybrid LNAs (low-noise amplifiers) that can be well suited to S-band applications.

The two models introduced are:

2.3 to 3.1 GHz: CL2701-L & CL2702-L
3.1 to 3.6 GHz: CL3501-L & CL3502-L

These Low Noise Amplifiers are built with GaAs p-HEMT die attached on a ceramic thick film substrate. Alumina, the most commonly used type of ceramic, is what RHIC has chosen due to its relatively high thermal conductivity. These Low Noise Amplifiers are focused on giving the lowest noise possible; exhibiting low noise performance of better than 1dB noise figure. The devices work at input levels as high as 20dBm thanks to the initial gate length of 1200µm design.

SOURCE: RFHIC