News | October 19, 2000

New Intel flash memory to speed performance of next- generation wireless devices

Intel Corp. (Santa Clara, CA) has introduced a new flash memory chip designed to enhance the performance of next-generation Internet phones and wireless devices.

According to Intel, the 1.8 Volt Wireless Flash Memory is the highest performance flash chip available, carrying out key functions up to four times faster than existing flash solutions. This increased performance results in higher data throughput rates that speed up data-intensive Internet phone applications such as browsing, data streaming and text messaging.

The new chip consumes just 1.8 volts of power. The Intel 1.8 Volt Wireless Flash Memory's low voltage allows Internet phone energy savings of up to 60 percent, extending stand-by and talk time as well as battery life.

The product also incorporates several major enhancements that increase performance, including flexible partition architecture and enhanced factory programming. Flexible partition architecture allows the phone or device to read from one partition while writing to or erasing another partition.

Also, the enhanced factory programming feature is a programming algorithm built into the flash chip that speeds device programming, saving manufacturing time and costs as much as 80 percent.

The Intel 1.8 Volt Wireless Flash Memory will be sampling 32Mbit and 64Mbit densities this month, with production in the first quarter of 2001. The 128Mbit density will follow later in 2001. In 10,000-unit quantities, the 32Mbit density is priced at $16 each and the 64Mbit density at $30 each.

Edited by Winn Hardin
Managing Editor, Wireless Design Online