Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). And GaN on SiC devices can deliver the much-needed high temperature reliability and power density for these applications due to unbeatable thermal conductivity of the materials as well as a lattice match between them.1
But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
For X-band application designers, Wolfspeed, the vertically integrated GaN on SiC device manufacturer and provider, foundry services brings to the table not only over 30 years of experience in wide-bandgap materials and development but device design success.
Process is the secret sauce
Wolfspeed counts several processes in its portfolio, each designed to best meet a different set of application requirements (Figure 1). For instance, G28V5 is a high-performance 28-V process that targets high-frequency applications as well as lower-frequency operation for the highest efficiency or wide bandwidth requirements.