Article | August 6, 2025

How Do You Characterize DUTs from 67 to 98 GHz Accurately? Start with the Right T&M Amplifier

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Gallium nitride (GaN) amplifiers provide the high efficiency, output power, and thermal stability needed for next-generation applications operating from 67–98 GHz, spanning telecommunications, industrial/medical imaging, and defense. In telecom, upper mmWave bands support 6G’s high data rates, low latency, and high reliability. In medical and industrial imaging, higher frequencies improve resolution, depth sensing, and fault detection. Defense radar and electronic warfare systems benefit from enhanced resolution, bandwidth, and threat detection capabilities.

Traditional semiconductor technologies such as gallium arsenide (GaAs) or silicon struggle at these high frequencies, falling short in efficiency, power, and stability. GaN’s wide bandgap, high electron mobility, and superior thermal performance enable higher output power, better efficiency, and improved linearity—meeting long-range signal integrity and signal-to-noise requirements.

Test and measurement (T&M) infrastructure is critical for advancing GaN amplifier technology. High-frequency, high-power device characterization requires advanced instrumentation, including vector network analyzers (VNAs) with frequency extenders, impedance tuners, high-stability signal sources, wideband driver amplifiers, directional couplers, and robust RF interconnects. Testing methodologies include S-parameter measurements, IV and pulsed IV characterization, power sweeps, load-pull validation, and long-term reliability assessments.

Driver amplifiers play a central role in T&M setups, boosting signals to multi-watt levels without introducing distortion. For power sweep and load-pull testing, driver amplifiers ensure accurate, high-power delivery to the device under test (DUT) while maintaining measurement fidelity.

By combining GaN amplifier performance with specialized T&M driver solutions, industries can accelerate the development, validation, and deployment of next-generation high-frequency systems.

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