6.0 - 18.0 GHz GaN MMIC Power Amplifier: CMPA601J025D
The CMPA601J025D is a gallium nitride (GaN) MMIC power amplifier suited for jamming amplifiers, test equipment amplifiers, broadband amplifiers, and radar amplifiers. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
The CMPA601J025D offers greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved.
For additional features and specifications on the CMPA601J025D power amplifier, download the available datasheet.
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