10.29.26 -- GaN Pulse Recovery, Drain Voltage, And SOA Tips

There are a variety of standardized methods for describing antenna parameters, and this article aims to provide an overview of key antenna parameters and relevant background.

GaN-based LNAs offer superior protection against interference in EW systems but suffer from extended pulse recovery times, which can be reduced by increasing bias current.

Increasing drain voltage in GaN RF transistors boosts power but risks thermal stress, reliability issues, and efficiency loss. SOA adherence and proper thermal management ensure longevity.

This presentation demonstrates ray-tracing and scattering simulations from Remcom’s WaveFarer combined with chirp Doppler analysis algorithms to assess radar performance for drive scenario simulations.