GaAs HBT Power Amplifier

Toshiba America Electronic Components/Taecllium arsenide (GaAs) hetero-bipolar transistor (HBT) microwave monolithic integrated circuit (MMIC) power amplifier. This new power amplifier, designated the TG2013F is the company's first GaAs HBT device to be marketed in the United States.

The new GaAs HBT power amplifier is ideal for applications in 1.9 gigahertz (GHz) personal communications systems (PCS) and code-division multiple access (CDMA) systems. The new device offers high output power (Po) of 29dBmW, a single power supply of 3.6 volt (V), high gain of 24dB, efficiency to 30 percent, and low voltage standing wave ratio (VSWR) of less than three. With a low VSWR, the device transmits more power rather than reflecting it, therefore making it more efficient.

Offering a GaAs HBT power amplifier with bias circuit, this device provides better linearity than a silicon device. While the high output power and high gain (Gp) boosts the signal for transmission, the small package (5.3 x 6.4mm) enables engineers to create smaller design solutions. An exclusive feature of Toshiba's GaAs HBT is the internal gain control amplifier, which prevents the final stage of the power amplifier from going into overdrive.

In addition, Toshiba's unique temperature compensation circuit prevents the final stage of the power amplifier from breaking down due to overheating.

The TG2013F is housed in a 20-pin high power small outline package (HSOP) type packaging measuring 5.3 x 6.4mm. The HSOP20 is a thin, flat package excellent for use in handsets, given the industry trend toward smaller and thinner handsets.

<%=company%>, 1251 6th Ave., 41st Fl., New York, NY 10020. Phone: 212-596-0600; Fax: 212-593-3875.