GaAs Field Effect Transistors

Mitsubishi Electronics America Inc.rporates a number of improvements, including the use of a new hetero-structure epitaxial technology, adoption of a T-shaped gate structure, and the employment of a new gate metalization system. The resulting device produces 160 watts of output power at S-band.

Introductions in the new HFET family of devices include:

• MGFS52V2122 -- a 160-watt, push-pull configuration, power transistor intended for use in W-CDMA base stations operating in the 2.1- to 2.2-GHz range (S Band). Typical output power (P2dB) is 52 dBm and typical power gain (GLP) is 11 dB at 2.12 GHz.
• MGFS48V2527 -- a 60-watt, push-pull configuration, power transistor intended for use in MMDS transmitters operating in the 2.5- to 2.7-GHz range (S Band). Typical output power at P2dB is 48 dBm and typical GLP is 10 dB across the band.
• MGFL48V1920 -- a 60-watt watt, push-pull configuration, power transistor intended for use in PCS base stations operating in the 1.9- to 2.0-GHz range (L Band). Typical output power at P2dB is 48 dBm and typical GLP is 11.5 dB across the band.
• MGFC47V5864 -- a 50-watt watt, single-ended, internally matched configuration, power transistor intended for use in solid-state power amplifiers operating for VSAT applications operating in the 5.8- to 6.4-GHz range (C-band). Typical output power at P2dB is 47 dBm and typical GLP is 9.5 dB across the band.

The MGFS52V2122, MGFS48V2527, MGFL48V1920, and MGFC47V5864 GaAs FETs are each available in a hermetically sealed metal-ceramic, low thermal-resistance package.

Samples of the MGFS52V2122 device are available now, with volume production scheduled for the fourth quarter of 2000. The MGFS48V2527 and MGFL48V1920 devices are now in volume production.

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