Downloads
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MLDD 2-Way Power Dividers: 6040400 Datasheet
3/1/2024
The Model 6040400 MLDD 2-way power divider offers high performance over the ultra-broadband frequency range of 4.0 to 40.0 GHz in a compact, lightweight package
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MLDD 2-Way Power Dividers: 6040400
3/1/2024
The Model 6040400 MLDD 2-way power divider offers high performance over the ultra-broadband frequency range of 4.0 to 40.0 GHz in a compact, lightweight package
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RF Components For Radar: Duplexing
2/26/2024
Delving into duplexing methods for radar systems, explore the advantages of employing either circulator and hybrid coupler setups or single pole double throw switches (SPDT).
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Snubber Capacitors In The Field
2/26/2024
Learn about the changing landscape of power supply circuits and why it's important to adapt to advancements in semiconductor technology.
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Shedding More Light On Ultra-Wideband
2/26/2024
Discover how Ultra-Wideband (UWB) technology is revolutionizing manufacturing by providing unparalleled precision in locating products and optimizing processes for enhanced efficiency and safety.
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AEC-Q200 Leaded Standoff MLCC Capacitors Datasheet
2/15/2024
Metal Frame J-Lead Terminal MLCC components offer enhanced performance under critical testing conditions, including thermal shock and mechanical vibrations.
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AEC-Q200 Leaded Standoff MLCC For Automotive Applications
2/15/2024
Metal Frame J-Lead Terminal MLCC components offer enhanced performance under critical testing conditions, including thermal shock and mechanical vibrations.
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How To Size A Snubber Capacitor For Your Power Supply
2/15/2024
Explore snubber derivation for a simple switching circuit, a helpful exercise in understanding how these switches impact snubber capacitor sizing.
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750 V, 9 mohm SiC FET: UJ4SC075009B7S Datasheet
2/15/2024
The UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET based on a unique cascode circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to make a normally-off SiC FET device.
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750 V, 9 mohm SiC FET: UJ4SC075009B7S
2/15/2024
The UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET based on a unique cascode circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to make a normally-off SiC FET device.