About Us
IntroductionIn 1991, William J. Pratt, Powell T. Seymour and Jerry D. Neal founded RF Micro Devices (RFMD) in Greensboro, North Carolina. RFMD has evolved from a provider of discrete components for handsets into a preferred global supplier of high-performance, low-cost solutions for multiple wireless markets. Today, we provide the world's leading wireless manufacturers the critical components that enable wireless devices to transmit and receive signals. Essentially, we help the world's communications devices communicate.
Recognizing that our customers' success requires advanced devices in the competitive wireless industry, we've assembled the core strengths to help them succeed. RFMD's core strengths inlcude expertise in designing and developing radio frequency integrated circuits (RFICs), a growing portfolio of semiconductor process technologies, the ability to provide reliable service and support to our customers and high-volume, low-cost semiconductor manufacturing capapcity.
Products
As we see mobility's trend toward convergence, RFMD is the only company with complete radio solutions for cellular, WLAN, Bluetooth® wireless technology, GPS, satellite radio and infrastructure. RFMD is the world's number one provider of power amplifiers (PAs) for cellular handsets and is a trusted PA supplier to every major handset manufacturer. We continue to drive PA innovation with our highly integrated PowerStar® PA modules. And, our revolutionary POLARISTM TOTAL RADIOTM transceivers perform all the functions of the handset's radio section, enabling us to reduce our customers' form factor, total cost and time to market. In addition, our advanced proudct capabilities include WLAN solutions for all standards, single-chip CMOS solutions for Bluetooth applications and chipsets for GPS and satellite radio prodcuts. RFMD also offers solutions for wireless infrastructure applications.
Click here to download the PowerPoint presentation "High Power GaN RF Power Technology for Cell Phone Base Station Applications", presented at IMS 2004.
Multiple Process Technologies and Optimum Technology Matching®
We led the wireless market in the adoption of gallium arsenide heterojunction bipolar transistor (GaAS HBT, and we are the world's largest manufacturer of GaAs HBT semiconductors. In addition to GaAs HBT, our design expertise spans numerous process technologies - GaAs MESFET, GaAs pHEMT, Si Bipolar, Si CMOS, Si BiCMOS, SiGe BiCMOS, InGap HBT and GaN. This broad range of process technologies drives RFMD's OOptimum Technology Matching® (OTM) strategy. Through OTM, our engineers match the appropriate process technology and device technology to each product, providing our customers the best possible combination of price and performance.
Strategic Alliance
Our customers' success depends upon the quality and reliability of our products and service. We engage in relationships with top suppliers and strategic partners, including Jazz Semiconductor and Silicon Wave, to provide RFMD and our customers a competitive advantage.
Research and Development
Ongoing initiatives in research and development (R&D) enhance our ability to aggressively target next-generation processes, circuits, architectures, standards and packaging.
Global Expansion
Over the past decade, RFMD has grown from a single office with a handful of employees into a 1.2 million square foot campus with 22 offices located in 13 countries throughout the world employing over 1,800 people.
Capacity
RF Micro Devices is committed to capacity. We own and operate a molecular beam epitaxy (MBE) facility, two high-volume GaAs HBT fabrication facilities and an advanced technology foundry and fab dedicated to the development of gallium nitride materials and devices. We perform 100 percent RF testing in our two test and tape and reel facilities located in Greensboro, North Carolina and Beijing, China.
Customer Support
As a customer-centric company, RFMD strives to be the most dependable component of our customers' supply chains. By developing our resources, such as advanced design expertise and extensive applications support, we meet and exceed our customers' changing requirements. We have located our design centers and sales and support offices near our customers throughout the world, enabling quick response and on-site teamwork. This unmatched support has aligned us with every major handset manufacturer and other industry-leading companies.
Culture
RFMD is powered by our most valuable resource - a team of highly dedicated, extremely talented employees. At RFMD, we promote creativity, wise decision-making, teamwork, ownership and personal development to benefit our employees, the company and, ultimately, our customers.
Corporate Mission
RF Micro Devices combines the cutting-edge talent of its employees with its revolutionary technology to design and manufacture state-of-the-art components. Looking forward, we plan to continue this trend by supporting our corporate mission – to be the premier supplier of low-cost, high-performance integrated circuits and solutions – enabling wireless connectivity.
For information about RF Micro Devices, please visit our website at www.rfmd.com or access the following links.
-Online Catalog, Products & Data Sheets - http://www.rfmd.com/product_data.htm
-Press releases - http://www.rfmd.com/investor_relations/press_releases_frameset.htm
-Product Photography -http://www.rfmd.com/promo_subpage_frameset.asp?loc=product_photography
-Tradeshows - http://www.rfmd.com/promo_subpage_frameset.asp?loc=tradeshows
Contact Information
7628 Thorndike Road
Greensboro, NC 27409
United States
Phone 336-664-1233
FAX 336-931-7454
Click Here To Download:
2008 Aerospace & Defense Product Selection Guide And Capabilities Overview
Fall 2008 Multi-Market Product Guide
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409-9421
UNITED STATES
Phone: 336-678-5570, ext. 1
Fax: 336-931-7454
Contact: Patti Goots
- High-Efficiency, Linear PA Modules
- Industry's Smallest SMT Transformer: RFXF9504
- CGA-6618: Dual CATV Broadband High Linearity InGaP HBT Amplifier
- SGB-6533 DC-3.0 GHz SiGe HBT Gain Block with Active Bias
- SGA-0163 DC - 4500 MHz, SiGe Cascadable Gain Block
- SGA-0363
- SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
- SNA-500: DC-3 GHz Cascadable GaAs MMIC Amplifier
- SGB-2433 DC-4.0 GHz SiGe HBT Gain Block With Active Bias
- SGB-4533 DC-3.0 GHz SiGe HBT Gain Block with Active Bias
- SXT-289 1800-2500 MHz Power Amplifier
- SNA-400: DC-10 GHz Cascadable GaAs MMIC Amplifier
- SNA-600: DC-6.5 GHz Cascadable GaAs MMIC Amplifier
- SPA-2318 1700-2200 MHz 1 Watt Power Amp With Active Bias
- SXB-4089 400-2500 MHz 1/2 W Medium Power InGaP/GaAs HBT Amplifier With Active Bias
- STA-6033 4.9 – 5.9 GHz 3.3V Power Amplifier
- SXA-389B 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier With Active Bias
- SGB-2233 DC-4.5 GHz SiGe HBT Gain Block with Active Bias
- SGB-6433 DC-3.5 GHz SiGe HBT Gain Block with Active Bias
- SGB-4333 DC-3.0 GHz SiGe HBT Gain Block With Active Bias
- Datsheet: SGB-2233 DC–4.5GHz Active Bias Gain Block
- CGA-3318 Dual CATV Broadband High Linearity SiGe HBT Amplifier
- SFT-5100 Transimpedance Amplifier
- SFT-0200
- XD010-14S
- XD010-EVAL D Package Connectorized Test Fixture
- SNA-100: DC-10 GHz Cascadable GaAs MMIC Amplifier
- SZA-5044 WLAN/WiMAX Power Amplifier
- SGL-0263
- SPF-2000 Low-Noise, High-Linearity pHEMT GaAs FET
- SGA-8343X
- STA-5063 3.3 - 6.2 GHz, General-Purpose, 3.3 V, 15 dBm Amplifier
- SNA-100S
- SXA-389 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Active Bias
- SPF-2000 DC-12 GHz Low Noise pHEMT FET
- SXA-289
- SGA-9189 Silicon Germanium HBT Amplifier
- SGA-1263 (Z) DC-4000 MHz Silicon Germanium HBT Cascadable Gain Block
- SXA-3318B 400-2500 MHz 1/2 W Medium Power GaAs HBT Amplifier with Active Bias
- CGA-0116 3-Output Active Splitter for CATV
- SGL-0163 0.8 - 1.3 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier
- SNA-200 DC-6.5 GHz Cascadable GaAs MMIC Amplifier
- SGA-1163 DC-6000 MHz Silicon Germanium HBT Cascadable Gain Block
- SFT-0100 Transimpedance Amplifier
- SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET
- SHF-0189 0.05-6 GHz, 0.5 Watt GaAs HFET
- SPF-2086T 0.1-12 GHz Low Noise pHEMT GaAs FET
- SPA-2118 850 MHz 1 Watt Power Amp with Active Bias
- SHF-0589 0.05-3 GHz, 2 Watt GaAs HFET
- SPA-1318 2150 MHz 1 Watt Power Amp With Active Bias
- SBA-4086 DC-5 GHz Cascadable InGaP/GaAs MMIC Amplifier
- SBA-5086 DC-5 GHz Cascadable InGaP/GaAs MMIC Amplifier
- SGA-9289
- SBA-4089 DC-5 GHz Cascadable InGaP/GaAs MMIC Amplifier
- SBA-5089 DC-5 GHz Cascadable InGaP/GaAs MMIC Amplifier
- SBF-5089 DC-500 MHz Cascadable InGaP/GaAs MMIC IF Amplifier
- SBW-5089 DC-8 GHz Cascadable InGaP/GaAs MMIC Amplifier
- SGA-8343 Low Noise, High Gain SiGe HBT
- SPA-1218
- SPA-1118 850 MHz, 1 Watt Power Amplifier With Active Bias
- SLM-20T 1700-2000 MHz High Linearity Low Noise Amplifier
- SLX-2143 1700-2200 MHz High Linearity Low Noise Amplifier Module
- SBF-4089 DC-500 MHz Cascadable InGaP/GaAs MMIC IF Amplifier
- SPDT And SP3T Switches: Broadband Low Power
- RFMD® Broadband High And Medium Power SPDT Switch Family
- GaN Foundry Services
- GaAs Power Doubler Hybrid - D10040300GTH
- Wi-Fi Front End Modules
- RF5602 - 3.3 V To 5.0 V, 2.3 GHz To 2.7 GHz Linear Power Amplifier
- RF5325 - Front End Module
- RF5725 - 3.3 V, Single-Band Front-End Module
- RF5345 - 3.3 V, Single-Band Front-End Module
- RF1450 - SP4T Switch
- SPA-1526Z - 2W Class A Amplifier
- SPA-1426Z - 1W Class A Amplifier
- PC2140AG-21H - Drop-In Circulator
- PC1960AG-21H - Drop-In Circulator
- PC1843AG-21H - Drop-In Circulator
- PC0940AG-21H - Drop-In Circulator
- PC0882AG-21H - Drop-In Circulator
- SZP-3026Z - 2W Class AB Amplifier
- SZP-2026Z - 2W Class AB Amplifier
- CXE-1089Z - 75 Ohm CATV Gain Block
- ML5825 - 2.4 GHz to 5.8 GHz Frequency Translator
- ML2726 - 2.0 Mbps FSK Transceiver
- ML5805 - Variable Data Rate FSK Transceiver With PA
- RF6285 - Multi-Band Linear Amplifier Module
- RF6281 - 3 V 1950 MHz UMTS Linear Power Amplifier Module
- ML5830 - Low Power Integrated 5.8GHZ ASK/FSK Transmitter
- RF2815: GPS Low-Noise Amplifier With Integrated Filter
- SPF-5344Z - Low-Noise, High-Linearity, High-Gain Amplifier
- Receiver
- Reference Design Series
- SZP-5026 - 2W Class AB Amplifier
- Downconverter
- Amplifiers (Broadband and General)
- IF Gain Controlled Amplifier
- PA Driver Amplifiers
- Direct Quadrature Modulator
- GaN CATV Amplifier Modules
- BiCMOS Voltage Controlled Oscillator
- GaAs Driver Amps
- RF3161: Quad-Band GSM850/GSM900/DCS/PCS Power Amp Module
- RF3146 Quad-Band Power Amplifier Module
- RF Amplifier Integrated Circuit (IC) Gain Blocks
- Linear Amplifier Series
- Tetra Quadrature Modulator
- Triple-Band GSM/DCS/PCS Power Amp Module
- Dual-Band Direct Quadrature Modulator
- Multi-Mode Quad-Band Quadrature Modulator
- RF2484 Direct Quadrature Modulator
- RF2480 Direct Quadrature Modulator
- RF2861 CDMA Cellular LNA/Mixer/Downconverter
- WLAN Solutions for 802.11b
- Global Positioning System Receiver
- CDMA Upconverters
- PowerStar® GSM Power Amplifier Module
- RF2498 Tri-Band Quad-Mode CDMA/GPS Front End
- RF2496 Tri-Band Quad-Mode CDMA/GPS Front End
- RF2489 Dual-Band/Tri-Mode CDMA Low-Noise Amplifier/Mixer
- RF3158 GSM/EDGE PowerStar 6x6mm Power Amplifier Module
- RF5924 Front-End WLAN Module
- RF386X Series -- GaAS pHEMT Low-Noise Amplifiers (LNAs)
- RF3198 - Dual-Band GSM900/DCS Power Amp Module
- RF3196 Quad-Band Power Amplifier Module
- RF386X Series--GaAs pHEMT Low-Noise Amplifiers (LNAs)
- S518324-44Z: High-Performance Programmable-Gain Upstream CATV Amplifier
- PowerStar® Power Amplifier Modules With Integrated Power Control
- RF205x Family: Integrated RF Synthesizer and VCO with Mixers
- 3G Product Portfolio With TD-SCDMA Power Amplifier
- RFMD Introduces Single-Placement RF Front Ends
- First Silicon Switches For 3G Smartphones
- RF Micro Devices Expands Industry-Leading Family Of 2G Transmit Modules
- RFMD Commences Volume Production Of WCDMA/HSPA+ Power Amplifiers
- RFMD® Releases Family Of WCDMA/HSPA+ Power Amplifier Modules For 3G Multi-Band, Multimode Mobile Devices
- RFMD And Nujira Partner To Create Broadband Power Amplifier For 4G Base Stations
- U.S. DoD Awards RFMD $1.4M For Development Of GaN Technology And High-Power RF Solutions
- RFMD Selected To Support Samsung 3G Handset Platform
- RFMD Releases Transmitter To Comply With China's Electronic Toll Collection Standard
- RFMD Ships Pre-Production Gallium Nitride (GaN)-Based CATV Hybrid Amplifiers To Major U.S.-Based CATV Equipment Provider
- RFMD® Selected By Leading Smartphone Manufacturer To Supply High Performance Cellular Switch
- RFMD® Receives First GaN Product Purchase Order From Tier-One Wireless Base Station Manufacturer
- RFMD® Announces Major Gallium Nitride (GaN) Milestones
- RFMD Introduces Frequency Converter IC
- ZTE Selects RFMD® To Support High Volume S305 Handset
- RFMD® Secures Multiple Design Wins For GPS LNA Module
- RFMD(R) Powers New Samsung 3G Handsets With Ultra-Compact WCDMA/HSDPA Power Amplifiers
- RFMD And U.S. Department Of Energy's National Renewable Energy Laboratory Announce Collaboration
- RFMD® Introduces Highly Integrated, Multi-Use VCO For Military, Satcom, And Industrial Markets
- RFMD(R) Introduces Family Of Multi-Use Distributed Amplifiers For Broadband, High-Frequency Applications
- RFMD Expands Multi-Market Product Catalog To Include High Isolation Broadband Switches
- RFMD® Announces Availability Of Gallium Nitride (GaN) Foundry Services
- RFMD® Expands Family Of Packaged Broadband High Frequency Amplifiers
- RFMD® Introduces High Efficiency Linear Power Amplifier Designed For WiFi And WiMAX Applications
- RFMD® To Showcase Portfolio Of RF Communications Components And Launch GaN Foundry Services At IEEE MTT-S 2009
- RFMD(R) Selected By Leading Manufacturer Of Smartphones To Supply Highly Integrated GPS LNA Module
- RFMD® Announces Industry’s First Converged 3G/4G Cellular Front End Platform Capable Of Nine-Band Coverage
- RFMD Expands Front End Module Portfolio For Mobile Wi-Fi Market
- MediaTek Selects RFMD To Support Multiple Handset Platforms
- RFMD Targets CDMA Components Market With Compelling New Products
- RFMD Announces Availability Of 3G Switch Filter Modules
- RFMD Releases Family Of WCDMA/HSPA+ Power Amplifier Modules For 3G Multi-Band, Multimode Mobile Devices
- RFMD Expands High-Performance RF Switch Portfolio
- RFMD Introduces Family Of 2G Dual-Band Transmit Modules For Emerging Market Handsets
- 3G/4G Multimode Cellular Front End Challenges (Part 2)
- 3G/4G Multimode Cellular Front End Challenges
- RFMD Announces Actions To Reduce Manufacturing Costs And Increase Cash Flow
- RFMD Broadens 3G Standard Product Portfolio With WCDMA/HSDPA Power Amplifiers
- RFMD Extends Family Of Broadband GaAs pHEMT Amplifiers
- RFMD Selected By Samsung To Support More Than 10 Upcoming 3G Handsets
- RFMD Announces Triple-Path Cellular Front End For 3G Handset Platform
- RFMD Commences Volume Shipments Of POLARIS To Multiple Handset Manufacturers
- RFMD Releases GaN CATV Amplifier Modules
- MTT-S 2008: RFMD Releases 5.8 GHz ISM Band Transceiver With Integrated PA
- RFMD To Eliminate Approximately $75 Million In Wireless Systems Expenses
- RFMD Introduces Single Junction Circulators For Cellular Base Stations
- RFMD Receives Production Orders For POLARIS 3 Silver
- RF Micro Devices Announces Production Test Facility Consolidation
- Total Radiated Power (TRP) And Harmonics
- RFMD Forecasts Strong Growth For Emerging Market Products In 2008
- RFMD Completes Acquisition Of Filtronic Compound Semiconductors
- RFMD Now Supporting All Top-Five Handset Manufacturers
- Over-The-Air Testing
- Total Radiated Power Implications For A GSM Power Amplifier
- RFMD To Acquire Filtronic Compound Semiconductors
- RFMD Introduces MEMS Technology For 3G Multimode Handsets
- RFMD Announces Expansion To Accommodate Rising Demand For Compound Semiconductors
- Intelligent Power Management: A Method To Improve 2G/3G Handset Talk Time
- RFMD® GaN Technology Meets Future Wireless Market Demands - Today
- A Space-Saving, Self-Shielding Module With Improved Power Savings For Edge Handset Applications
- RFMD To Acquire Sirenza Microdevices For $900 Million
- RFMD Ships 100 Millionth WCDMA Cellular Front End
- RFMD Expands Capabilities In Beijing Facility
- RFMD Introduces Smallest Linear PA Module With Integrated Power Detector
- RF Micro Devices to Showcase EDGE, WCDMA Solutions At 3GSM World Congress
- RF Micro Devices Opens Customer Support And Design Center In France
- RF Micro Devices Extends PowerStar Power Amplifier Module Portfolio
- RF Micro Devices Announces Availability Of Polaris 2 Total Radio Solution
- RF Micro Devices Ships One Millionth EDGE Transceiver Chipset
- RF Micro Devices Expands Shipments Of Polaris Solution To Motorola
- RFMD Delivers Polaris Total Radio Solution For New AT&T Wireless Device
- RF Micro Devices Delivers Transceivers, PAs For New Motorola Handsets
- RFMD Ships Wireless LAN Transceivers For Nintendo DS Game System
- Air2U USB Adapter Uses RFMD's UltimateBlue Single-Chip Bluetooth Component
- RF Micro Devices Introduces New Bluetooth SoC Solution With Enhanced Data Rate
- RFMD Recognized In Ranking Of Wireless Communications Semiconductor Suppliers
- RF Micro Devices Opens Sales and Customer Support Office in Shenzhen, China
- RF Micro Devices Ships One Billionth Power Amplifier
- RFMD Extends Leadership in Power Amplifiers
- A Manufacturing Model For GaN-on-SiC MMIC Technology Based On An Existing High-Volume Commercial GaAs Factory
- RFMD Introduces Transmit System For 3G Handsets
- RFMD Announces Self-Shielding Technology At 3GSM World Congress
- RFMD Announces POLARIS 3 TOTAL RADIO Transceiver Solution
- RFMD Introduces GSM/GPRS PA Module For TRP Performance
- An Efficient Parasitic De-Embedding Technique For S-Parameter Characterization Of Silicon-Based RF/Microwave Devices
- RFMD Introduces GSM/GPRS PA Module For Dual-Band Handsets
- Modeling 3G/WCDMA/HSDPA Handset Transmit System
- MTT-S 2007: RFMD Showcases GaAS pHEMT LNAs, Demonstrates GaN High-Power Products
- MTT-S 2007: RFMD Extends Portfolio Of GaN Wideband Power Amplifiers
- MTT-S 2007: RFMD Introduces 48V High-Power GaN Transistors
- MTT-S 2007: RFMD Announces Design Wins For Wireless Infrastructure Products
- RFMD Advances In Ranking Of Global Wireless Semiconductor Vendors



