About Us
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's website at www.rfmd.com.
Download the 2010 Product Selection Guide
•Video: High-Power Packaging Capabilities
Contact Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409-9421
UNITED STATES
Phone: 336-678-5570, ext. 1
Fax: 336-931-7454
Contact: Irma Swain
Hot Products
- 5 GHz Linear Power Amplifier: RF5616
- 180 Watt GaN Matched Power Transistor (MPT) - RFG1M09180
- Wireless Infrastructure VCOs: RFVC975XF Series
- WiFi Front End Module For High-Performance Dual-Band Applications: RF5608
- Fully Tested WiMAX Power Amplifier: RF5633
- Front End Module For Handheld WiFi And Bluetooth® Systems: RF5755
- High Linearity, Low Insertion Loss Switches: RFSW204x
- Front End Module For ZigBee®/Smart Energy Applications: RF6525
- Digital-Controlled Variable Gain Amplifier: RFDA0015
- Single-Chip Fully Integrated FSK Transceiver with PA & LNA: ML2730
- High-Efficiency, Linear PA Modules
- Industry's Smallest SMT Transformer: RFXF9504
- CGA-6618: Dual CATV Broadband High Linearity InGaP HBT Amplifier
- SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
- SNA-500: DC-3 GHz Cascadable GaAs MMIC Amplifier
- SXT-289 1800-2500 MHz Power Amplifier
- SNA-400: DC-10 GHz Cascadable GaAs MMIC Amplifier
- SNA-600: DC-6.5 GHz Cascadable GaAs MMIC Amplifier
- STA-6033 4.9 – 5.9 GHz 3.3V Power Amplifier
- SGB-4333 DC-3.0 GHz SiGe HBT Gain Block With Active Bias
- CGA-3318 Dual CATV Broadband High Linearity SiGe HBT Amplifier
- SFT-5100 Transimpedance Amplifier
- SFT-0200
- XD010-14S
- XD010-EVAL D Package Connectorized Test Fixture
- SNA-100: DC-10 GHz Cascadable GaAs MMIC Amplifier
- SZA-5044 WLAN/WiMAX Power Amplifier
- SPF-2000 Low-Noise, High-Linearity pHEMT GaAs FET
- SGA-8343X
- STA-5063 3.3 - 6.2 GHz, General-Purpose, 3.3 V, 15 dBm Amplifier
- SNA-100S
- SPF-2000 DC-12 GHz Low Noise pHEMT FET
- SXA-3318B 400-2500 MHz 1/2 W Medium Power GaAs HBT Amplifier with Active Bias
- CGA-0116 3-Output Active Splitter for CATV
- SNA-200 DC-6.5 GHz Cascadable GaAs MMIC Amplifier
- SGA-1163 DC-6000 MHz Silicon Germanium HBT Cascadable Gain Block
- SFT-0100 Transimpedance Amplifier
- SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET
- SPF-2086T 0.1-12 GHz Low Noise pHEMT GaAs FET
- SHF-0589 0.05-3 GHz, 2 Watt GaAs HFET
- SPA-1318 2150 MHz 1 Watt Power Amp With Active Bias
- SBW-5089 DC-8 GHz Cascadable InGaP/GaAs MMIC Amplifier
- SGA-8343 Low Noise, High Gain SiGe HBT
- SPA-1218
- SLM-20T 1700-2000 MHz High Linearity Low Noise Amplifier
- SPDT And SP3T Switches: Broadband Low Power
- RFMD® Broadband High And Medium Power SPDT Switch Family
- GaN Foundry Services
- GaAs Power Doubler Hybrid - D10040300GTH
- Wi-Fi Front End Modules
- RF5602 - 3.3 V To 5.0 V, 2.3 GHz To 2.7 GHz Linear Power Amplifier
- RF5325 - Front End Module
- RF5725 - 3.3 V, Single-Band Front-End Module
- RF5345 - 3.3 V, Single-Band Front-End Module
- RF1450 - SP4T Switch
- SPA-1526Z - 2W Class A Amplifier
- SPA-1426Z - 1W Class A Amplifier
- PC2140AG-21H - Drop-In Circulator
- PC1960AG-21H - Drop-In Circulator
- PC1843AG-21H - Drop-In Circulator
- PC0940AG-21H - Drop-In Circulator
- PC0882AG-21H - Drop-In Circulator
- SZP-3026Z - 2W Class AB Amplifier
- SZP-2026Z - 2W Class AB Amplifier
- CXE-1089Z - 75 Ohm CATV Gain Block
- ML5825 - 2.4 GHz to 5.8 GHz Frequency Translator
- ML5805 - Variable Data Rate FSK Transceiver With PA
- RF6285 - Multi-Band Linear Amplifier Module
- RF6281 - 3 V 1950 MHz UMTS Linear Power Amplifier Module
- RF2815: GPS Low-Noise Amplifier With Integrated Filter
- SPF-5344Z - Low-Noise, High-Linearity, High-Gain Amplifier
- Receiver
- Reference Design Series
- SZP-5026 - 2W Class AB Amplifier
- Downconverter
- Amplifiers (Broadband and General)
- IF Gain Controlled Amplifier
- PA Driver Amplifiers
- Direct Quadrature Modulator
- GaN CATV Amplifier Modules
- BiCMOS Voltage Controlled Oscillator
- GaAs Driver Amps
- RF3161: Quad-Band GSM850/GSM900/DCS/PCS Power Amp Module
- RF Amplifier Integrated Circuit (IC) Gain Blocks
- Linear Amplifier Series
- Tetra Quadrature Modulator
- Triple-Band GSM/DCS/PCS Power Amp Module
- Dual-Band Direct Quadrature Modulator
- Multi-Mode Quad-Band Quadrature Modulator
- RF2484 Direct Quadrature Modulator
- RF2480 Direct Quadrature Modulator
- RF2861 CDMA Cellular LNA/Mixer/Downconverter
- WLAN Solutions for 802.11b
- Global Positioning System Receiver
- CDMA Upconverters
- RF2498 Tri-Band Quad-Mode CDMA/GPS Front End
- RF2496 Tri-Band Quad-Mode CDMA/GPS Front End
- RF2489 Dual-Band/Tri-Mode CDMA Low-Noise Amplifier/Mixer
- RF3158 GSM/EDGE PowerStar 6x6mm Power Amplifier Module
- RF5924 Front-End WLAN Module
- RF386X Series -- GaAS pHEMT Low-Noise Amplifiers (LNAs)
- RF3198 - Dual-Band GSM900/DCS Power Amp Module
- RF3196 Quad-Band Power Amplifier Module
- RF386X Series--GaAs pHEMT Low-Noise Amplifiers (LNAs)
- S518324-44Z: High-Performance Programmable-Gain Upstream CATV Amplifier
- PowerStar® Power Amplifier Modules With Integrated Power Control
- RF205x Family: Integrated RF Synthesizer and VCO with Mixers
Articles & Reviews
- RFMD® Commences Volume Shipments Of Next-Generation WCDMA/HSPA+ Power Amplifiers For Smart Phones And 3G Devices
- RFMD Introduces RF5365 WiFi Front End Module
- RFMD Expands Family Of Front End Modules For ZigBee®-Based Smart Energy And ISM Applications
- RFMD Introduces RF3482 Single-Chip Integrated Front End Module
- RFMD Introduces Highly Integrated Amplifier For Mobile PC And Embedded Applications
- RFMD Introduces RF3858 Front End Module For Advanced Metering Infrastructure (AMI) And Other 900 MHz ISM Band Applications
- RFMD(R) Expands Broadband Transmission Product Portfolio
- RFMD Introduces Highly Integrated WiFi Front End Module For High-Performance Dual-Band Applications
- RFMD Announces Qualification Of Second Gallium Nitride (GaN) Process Technology
- RFMD Introduces RF6525 Front End Module For ZigBee-Based Smart Energy And ISM Applications
- RFMD Expands Industry-Leading Product Portfolio With Family Of High Linearity, Low Insertion Loss Switches
- RFMD Introduces Fully Tested WiMAX Power Amplifier
- RFMD Introduces New Product Family Of High-Linearity Digitally-Controlled Variable Gain Amplifiers (DVGAs) For Wireless Infrastructure Applications
- Video: RFMD SmartEnergy AMI Utilizing Ember ZigBee® Technology Demo
- Video: RFMD High-Power, High-Efficiency GaN Doherty Demo
- RFMD Unveils Portfolio Of I/Q Converters For Wireless Backhaul Applications
- RFMD Introduces New Family Of Wireless Infrastructure VCOs
- RFMD® To Showcase Portfolio Of Industry-Leading RF Components At IEEE International Microwave Symposium (IMS) 2010
- RFMD® Expands Foundry Services Offerings To Include High Power Integrated Passive Technology
- RFMD Unveils Complete Front End Module For Handheld WiFi And Bluetooth Systems
- RFMD Expands Portfolio Of Single-Chip ISM Band Transceivers
- RF Micro Devices® Features Ember ZigBee® Technology In New Family Of High Performance Front End Modules For Smart Energy Applications
- 3G Product Portfolio With TD-SCDMA Power Amplifier
- RFMD Introduces Single-Placement RF Front Ends
- First Silicon Switches For 3G Smartphones
- RF Micro Devices Expands Industry-Leading Family Of 2G Transmit Modules
- RFMD Commences Volume Production Of WCDMA/HSPA+ Power Amplifiers
- RFMD® Releases Family Of WCDMA/HSPA+ Power Amplifier Modules For 3G Multi-Band, Multimode Mobile Devices
- RFMD And Nujira Partner To Create Broadband Power Amplifier For 4G Base Stations
- U.S. DoD Awards RFMD $1.4M For Development Of GaN Technology And High-Power RF Solutions
- RFMD Selected To Support Samsung 3G Handset Platform
- RFMD Releases Transmitter To Comply With China's Electronic Toll Collection Standard
- RFMD Ships Pre-Production Gallium Nitride (GaN)-Based CATV Hybrid Amplifiers To Major U.S.-Based CATV Equipment Provider
- RFMD® Selected By Leading Smartphone Manufacturer To Supply High Performance Cellular Switch
- RFMD® Receives First GaN Product Purchase Order From Tier-One Wireless Base Station Manufacturer
- RFMD® Announces Major Gallium Nitride (GaN) Milestones
- RFMD Introduces Frequency Converter IC
- ZTE Selects RFMD® To Support High Volume S305 Handset
- RFMD® Secures Multiple Design Wins For GPS LNA Module
- RFMD(R) Powers New Samsung 3G Handsets With Ultra-Compact WCDMA/HSDPA Power Amplifiers
- RFMD And U.S. Department Of Energy's National Renewable Energy Laboratory Announce Collaboration
- RFMD® Introduces Highly Integrated, Multi-Use VCO For Military, Satcom, And Industrial Markets
- RFMD(R) Introduces Family Of Multi-Use Distributed Amplifiers For Broadband, High-Frequency Applications
- RFMD Expands Multi-Market Product Catalog To Include High Isolation Broadband Switches
- RFMD® Announces Availability Of Gallium Nitride (GaN) Foundry Services
- RFMD® Expands Family Of Packaged Broadband High Frequency Amplifiers
- RFMD® Introduces High Efficiency Linear Power Amplifier Designed For WiFi And WiMAX Applications
- RFMD® To Showcase Portfolio Of RF Communications Components And Launch GaN Foundry Services At IEEE MTT-S 2009
- RFMD(R) Selected By Leading Manufacturer Of Smartphones To Supply Highly Integrated GPS LNA Module
- RFMD® Announces Industry’s First Converged 3G/4G Cellular Front End Platform Capable Of Nine-Band Coverage
- RFMD Expands Front End Module Portfolio For Mobile Wi-Fi Market
- MediaTek Selects RFMD To Support Multiple Handset Platforms
- RFMD Targets CDMA Components Market With Compelling New Products
- RFMD Announces Availability Of 3G Switch Filter Modules
- RFMD Releases Family Of WCDMA/HSPA+ Power Amplifier Modules For 3G Multi-Band, Multimode Mobile Devices
- RFMD Expands High-Performance RF Switch Portfolio
- RFMD Introduces Family Of 2G Dual-Band Transmit Modules For Emerging Market Handsets
- 3G/4G Multimode Cellular Front End Challenges (Part 2)
- 3G/4G Multimode Cellular Front End Challenges
- RFMD Announces Actions To Reduce Manufacturing Costs And Increase Cash Flow
- RFMD Broadens 3G Standard Product Portfolio With WCDMA/HSDPA Power Amplifiers
- RFMD Extends Family Of Broadband GaAs pHEMT Amplifiers
- RFMD Selected By Samsung To Support More Than 10 Upcoming 3G Handsets
- RFMD Announces Triple-Path Cellular Front End For 3G Handset Platform
- RFMD Commences Volume Shipments Of POLARIS To Multiple Handset Manufacturers
- RFMD Releases GaN CATV Amplifier Modules
- MTT-S 2008: RFMD Releases 5.8 GHz ISM Band Transceiver With Integrated PA
- RFMD To Eliminate Approximately $75 Million In Wireless Systems Expenses
- RFMD Introduces Single Junction Circulators For Cellular Base Stations
- RFMD Receives Production Orders For POLARIS 3 Silver
- RF Micro Devices Announces Production Test Facility Consolidation
- Total Radiated Power (TRP) And Harmonics
- RFMD Forecasts Strong Growth For Emerging Market Products In 2008
- RFMD Completes Acquisition Of Filtronic Compound Semiconductors
- RFMD Now Supporting All Top-Five Handset Manufacturers
- RFMD Introduces PowerStar Dual-Band GSM/GPRS Transmit Module
- Over-The-Air Testing
- Total Radiated Power Implications For A GSM Power Amplifier
- RFMD To Acquire Filtronic Compound Semiconductors
- RFMD Introduces MEMS Technology For 3G Multimode Handsets
- RFMD Announces Expansion To Accommodate Rising Demand For Compound Semiconductors
- Intelligent Power Management: A Method To Improve 2G/3G Handset Talk Time
- RFMD® GaN Technology Meets Future Wireless Market Demands - Today
- A Space-Saving, Self-Shielding Module With Improved Power Savings For Edge Handset Applications
- RFMD To Acquire Sirenza Microdevices For $900 Million
- RFMD Ships 100 Millionth WCDMA Cellular Front End
- RFMD Expands Capabilities In Beijing Facility
- RFMD Introduces Smallest Linear PA Module With Integrated Power Detector
- RF Micro Devices to Showcase EDGE, WCDMA Solutions At 3GSM World Congress
- RF Micro Devices Opens Customer Support And Design Center In France
- RF Micro Devices Extends PowerStar Power Amplifier Module Portfolio
- RF Micro Devices Announces Availability Of Polaris 2 Total Radio Solution
- RF Micro Devices Ships One Millionth EDGE Transceiver Chipset
- RF Micro Devices Expands Shipments Of Polaris Solution To Motorola
- RFMD Delivers Polaris Total Radio Solution For New AT&T Wireless Device
- RF Micro Devices Delivers Transceivers, PAs For New Motorola Handsets
- RFMD Ships Wireless LAN Transceivers For Nintendo DS Game System
- Air2U USB Adapter Uses RFMD's UltimateBlue Single-Chip Bluetooth Component
- RF Micro Devices Introduces New Bluetooth SoC Solution With Enhanced Data Rate
- RFMD Recognized In Ranking Of Wireless Communications Semiconductor Suppliers
- RF Micro Devices Opens Sales and Customer Support Office in Shenzhen, China
- RF Micro Devices Ships One Billionth Power Amplifier
- RFMD Extends Leadership in Power Amplifiers
- A Manufacturing Model For GaN-on-SiC MMIC Technology Based On An Existing High-Volume Commercial GaAs Factory
- RFMD Introduces Transmit System For 3G Handsets
- RFMD Announces Self-Shielding Technology At 3GSM World Congress
- RFMD Announces POLARIS 3 TOTAL RADIO Transceiver Solution
- RFMD Introduces GSM/GPRS PA Module For TRP Performance
- An Efficient Parasitic De-Embedding Technique For S-Parameter Characterization Of Silicon-Based RF/Microwave Devices
- RFMD Introduces GSM/GPRS PA Module For Dual-Band Handsets
- Modeling 3G/WCDMA/HSDPA Handset Transmit System
- MTT-S 2007: RFMD Showcases GaAS pHEMT LNAs, Demonstrates GaN High-Power Products
- MTT-S 2007: RFMD Extends Portfolio Of GaN Wideband Power Amplifiers
- MTT-S 2007: RFMD Introduces 48V High-Power GaN Transistors
- MTT-S 2007: RFMD Announces Design Wins For Wireless Infrastructure Products
- RFMD Advances In Ranking Of Global Wireless Semiconductor Vendors