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rfmd
Company Info
About Us     
 
Introduction

In 1991, William J. Pratt, Powell T. Seymour and Jerry D. Neal founded RF Micro Devices (RFMD) in Greensboro, North Carolina. RFMD has evolved from a provider of discrete components for handsets into a preferred global supplier of high-performance, low-cost solutions for multiple wireless markets. Today, we provide the world's leading wireless manufacturers the critical components that enable wireless devices to transmit and receive signals. Essentially, we help the world's communications devices communicate.

Recognizing that our customers' success requires advanced devices in the competitive wireless industry, we've assembled the core strengths to help them succeed. RFMD's core strengths inlcude expertise in designing and developing radio frequency integrated circuits (RFICs), a growing portfolio of semiconductor process technologies, the ability to provide reliable service and support to our customers and high-volume, low-cost semiconductor manufacturing capapcity.

Products

As we see mobility's trend toward convergence, RFMD is the only company with complete radio solutions for cellular, WLAN, Bluetooth® wireless technology, GPS, satellite radio and infrastructure. RFMD is the world's number one provider of power amplifiers (PAs) for cellular handsets and is a trusted PA supplier to every major handset manufacturer. We continue to drive PA innovation with our highly integrated PowerStar® PA modules. And, our revolutionary POLARISTM TOTAL RADIOTM transceivers perform all the functions of the handset's radio section, enabling us to reduce our customers' form factor, total cost and time to market. In addition, our advanced proudct capabilities include WLAN solutions for all standards, single-chip CMOS solutions for Bluetooth applications and chipsets for GPS and satellite radio prodcuts. RFMD also offers solutions for wireless infrastructure applications.

Click here to download the PowerPoint presentation "High Power GaN RF Power Technology for Cell Phone Base Station Applications", presented at IMS 2004.

Multiple Process Technologies and Optimum Technology Matching®

We led the wireless market in the adoption of gallium arsenide heterojunction bipolar transistor (GaAS HBT, and we are the world's largest manufacturer of GaAs HBT semiconductors. In addition to GaAs HBT, our design expertise spans numerous process technologies - GaAs MESFET, GaAs pHEMT, Si Bipolar, Si CMOS, Si BiCMOS, SiGe BiCMOS, InGap HBT and GaN. This broad range of process technologies drives RFMD's OOptimum Technology Matching® (OTM) strategy. Through OTM, our engineers match the appropriate process technology and device technology to each product, providing our customers the best possible combination of price and performance.

Strategic Alliance

Our customers' success depends upon the quality and reliability of our products and service. We engage in relationships with top suppliers and strategic partners, including Jazz Semiconductor and Silicon Wave, to provide RFMD and our customers a competitive advantage.

Research and Development

Ongoing initiatives in research and development (R&D) enhance our ability to aggressively target next-generation processes, circuits, architectures, standards and packaging.

Global Expansion

Over the past decade, RFMD has grown from a single office with a handful of employees into a 1.2 million square foot campus with 22 offices located in 13 countries throughout the world employing over 1,800 people.

Capacity

RF Micro Devices is committed to capacity. We own and operate a molecular beam epitaxy (MBE) facility, two high-volume GaAs HBT fabrication facilities and an advanced technology foundry and fab dedicated to the development of gallium nitride materials and devices. We perform 100 percent RF testing in our two test and tape and reel facilities located in Greensboro, North Carolina and Beijing, China.

Customer Support

As a customer-centric company, RFMD strives to be the most dependable component of our customers' supply chains. By developing our resources, such as advanced design expertise and extensive applications support, we meet and exceed our customers' changing requirements. We have located our design centers and sales and support offices near our customers throughout the world, enabling quick response and on-site teamwork. This unmatched support has aligned us with every major handset manufacturer and other industry-leading companies.

Culture

RFMD is powered by our most valuable resource - a team of highly dedicated, extremely talented employees. At RFMD, we promote creativity, wise decision-making, teamwork, ownership and personal development to benefit our employees, the company and, ultimately, our customers.

Corporate Mission

RF Micro Devices combines the cutting-edge talent of its employees with its revolutionary technology to design and manufacture state-of-the-art components. Looking forward, we plan to continue this trend by supporting our corporate mission – to be the premier supplier of low-cost, high-performance integrated circuits and solutions – enabling wireless connectivity.

For information about RF Micro Devices, please visit our website at www.rfmd.com or access the following links.
-Online Catalog, Products & Data Sheets - http://www.rfmd.com/product_data.htm
-Press releases - http://www.rfmd.com/investor_relations/press_releases_frameset.htm
-Product Photography -http://www.rfmd.com/promo_subpage_frameset.asp?loc=product_photography
-Tradeshows - http://www.rfmd.com/promo_subpage_frameset.asp?loc=tradeshows

Contact Information
7628 Thorndike Road
Greensboro, NC 27409
United States
Phone 336-664-1233
FAX 336-931-7454

RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RF Micro Devices, Inc. All other tradenames, trademarks and registered trademarks are the property of their respective owners. © 2001 RF Micro Devices, Inc.

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Contact Information     
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, North Carolina 27409-9421
UNITED STATES
Phone: 336-664-1233
Fax: 336-931-7454
Contact: Toni Fields

Hot Products     
RFMDcatv.jpg
GaN CATV Amplifier Modules
BiCMOS Voltage Controlled Oscillator
GaAs Driver Amps
RF4180: Dual-Band GSM900/DCS1800 Transmit Module
RF3161: Quad-Band GSM850/GSM900/DCS/PCS Power Amp Module
RF3177 PowerStar® TX Module
RF3146 Quad-Band Power Amplifier Module
RF3305 High Linearity Amplifier
RF Amplifier Integrated Circuit (IC) Gain Blocks
Linear Amplifier Series
3V PCS Low Noise Amplifier
Tetra Quadrature Modulator
Triple-Band GSM/DCS/PCS Power Amp Module
Dual-Band Direct Quadrature Modulator
Multi-Mode Quad-Band Quadrature Modulator
RF2484 Direct Quadrature Modulator
RF2480 Direct Quadrature Modulator
RF2861 CDMA Cellular LNA/Mixer/Downconverter
RF2860 CDMA PCS LNA/Mixer/Downconverter
WLAN Solutions for 802.11b
Global Positioning System Receiver
CDMA Upconverters
PowerStar® GSM Power Amplifier Module
RF2498 Tri-Band Quad-Mode CDMA/GPS Front End
RF2870 CDMA Cellular LNA/Mixer/Downconverter
RF2496 Tri-Band Quad-Mode CDMA/GPS Front End
RF2489 Dual-Band/Tri-Mode CDMA Low-Noise Amplifier/Mixer
RF3158 GSM/EDGE PowerStar 6x6mm Power Amplifier Module
RF5924 Front-End WLAN Module
RF386X Series -- GaAS pHEMT Low-Noise Amplifiers (LNAs)
Gallium Nitride (GaN) High-Power Transistors
RF4020 System-on-Chip (SoC)
RF3198 - Dual-Band GSM900/DCS Power Amp Module
RF3822 - PowerIC Broadband Power Amplifier
RF393X Series - 48V GaN Power Transistors
SiW1712 Radio Modem
RF3807 GaAs HBT Pre-Driver Amplifier
RF3198 Dual-Band GSM Power Amplifier Module
RF3196 Quad-Band Power Amplifier Module
RF3809 GaAs HBT Pre-Driver Amplifier
RF386X Series--GaAs pHEMT Low-Noise Amplifiers (LNAs)
S518324-44Z: High-Performance Programmable-Gain Upstream CATV Amplifier
RF205x Family: Integrated Configurable Components
PowerStar® Power Amplifier Modules With Integrated Power Control

Articles & Reviews     
RFMD Commences Volume Shipments Of POLARIS To Multiple Handset Manufacturers
RFMD Releases GaN CATV Amplifier Modules
MTT-S 2008: RFMD Releases 5.8 GHz ISM Band Transceiver With Integrated PA
RFMD To Eliminate Approximately $75 Million In Wireless Systems Expenses
RFMD Introduces Single Junction Circulators For Cellular Base Stations
RFMD Receives Production Orders For POLARIS 3 Silver
RF Micro Devices Announces Production Test Facility Consolidation
Total Radiated Power (TRP) And Harmonics
RFMD Forecasts Strong Growth For Emerging Market Products In 2008
RFMD Completes Acquisition Of Filtronic Compound Semiconductors
RFMD Now Supporting All Top-Five Handset Manufacturers
RFMD Introduces PowerStar Dual-Band GSM/GPRS Transmit Module
Over-The-Air Testing
Total Radiated Power Implications For A GSM Power Amplifier
RFMD To Acquire Filtronic Compound Semiconductors
RFMD Introduces MEMS Technology For 3G Multimode Handsets
RFMD Announces Expansion To Accommodate Rising Demand For Compound Semiconductors
Intelligent Power Management: A Method To Improve 2G/3G Handset Talk Time
RFMD® GaN Technology Meets Future Wireless Market Demands - Today
A Space-Saving, Self-Shielding Module With Improved Power Savings For Edge Handset Applications
RFMD To Acquire Sirenza Microdevices For $900 Million
RFMD Ships 100 Millionth WCDMA Cellular Front End
RFMD Expands Capabilities In Beijing Facility
RFMD Introduces Smallest Linear PA Module With Integrated Power Detector
RF Micro Devices to Showcase EDGE, WCDMA Solutions At 3GSM World Congress
RF Micro Devices Opens Customer Support And Design Center In France
RF Micro Devices Extends PowerStar Power Amplifier Module Portfolio
RF Micro Devices Announces Availability Of Polaris 2 Total Radio Solution
RF Micro Devices Ships One Millionth EDGE Transceiver Chipset
RF Micro Devices Expands Shipments Of Polaris Solution To Motorola
RFMD Delivers Polaris Total Radio Solution For New AT&T Wireless Device
RF Micro Devices Delivers Transceivers, PAs For New Motorola Handsets
RFMD Ships Wireless LAN Transceivers For Nintendo DS Game System
Air2U USB Adapter Uses RFMD's UltimateBlue Single-Chip Bluetooth Component
RF Micro Devices Introduces New Bluetooth SoC Solution With Enhanced Data Rate
RFMD Recognized In Ranking Of Wireless Communications Semiconductor Suppliers
RF Micro Devices Opens Sales and Customer Support Office in Shenzhen, China
RF Micro Devices Ships One Billionth Power Amplifier
RFMD Extends Leadership in Power Amplifiers
A Manufacturing Model For GaN-on-SiC MMIC Technology Based On An Existing High-Volume Commercial GaAs Factory
RFMD Introduces Transmit System For 3G Handsets
RFMD Announces Self-Shielding Technology At 3GSM World Congress
RFMD Announces POLARIS 3 TOTAL RADIO Transceiver Solution
RFMD Introduces GSM/GPRS PA Module For TRP Performance
An Efficient Parasitic De-Embedding Technique For S-Parameter Characterization Of Silicon-Based RF/Microwave Devices
RFMD Introduces GSM/GPRS PA Module For Dual-Band Handsets
Modeling 3G/WCDMA/HSDPA Handset Transmit System
MTT-S 2007: RFMD Showcases GaAS pHEMT LNAs, Demonstrates GaN High-Power Products
MTT-S 2007: RFMD Extends Portfolio Of GaN Wideband Power Amplifiers
MTT-S 2007: RFMD Introduces 48V High-Power GaN Transistors
MTT-S 2007: RFMD Announces Design Wins For Wireless Infrastructure Products
RFMD Advances In Ranking Of Global Wireless Semiconductor Vendors


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