SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET

Sirenza Microdevices' SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package.

Downloads:
•Datasheet: SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET

Sirenza Microdevices' SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Product Alert: Refer to Change Notification

Product Features

• High Linearity Performance at 1.96 GHz
• +30.0dBm P1dB
• +43.0dBm OIP3
• +23.7dBm IS-95 Channel Power
• +14.6dB Gain
• +21.7dBm W-CDMA Channel Power
• High Drain Efficiency (>50 percent at P1dB)
• See App Note AN-032 for Circuit Details
• Recommended Bias Condition: Vds=7V, Idq=200mA

Product Applications

• Analog and Digital Wireless System
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems

Downloads:
•Datasheet: SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET