Product/Service
Power Amplifier IC Optimized For WiMAX: RF5632
Source: RF Micro Devices, Inc.
The RF5632 power amplifier IC offers global customers a broadly applicable power amplifier IC featuring a powerful combination of industry-leading RF performance and best-in-class product size and ease-of-use. The RF5632 integrates a 3-stage PA and power detector into an industry-leading 4mm x 4mm QFN package, significantly minimizing customer design footprint requirements and is optimized for WiMax applications.
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•Power Amplifier IC Optimized For WiMAX: RF5632 - Datasheet
•Power Amplifier IC Optimized For WiMAX: RF5632 - Datasheet
•Power Amplifier IC Optimized For WiMAX: RF5632 - Datasheet
The RF5632 is a linear power amplifier IC designed specifically for WiMAX final or driver stage applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and is provided in a leadless chip carrier with a backside ground.
The RF5632 power amplifier IC is designed to maintain linearity over a wide range of temperatures and power outputs. The external match offers tunability for output power over multiple bands. The RF5632 power amplifier IC also features internal input and interstage match power down mode and dual power detectors.
Features
- Single 5.0V Power Supply
- 36dB Small Signal Gain
- Supports Low Gain Mode
- 2.5% EVM WiMAX +28dBm 5.0V
- Single Output Power Detector
- Multiple Frequency Ranges
- High Efficiency
•Power Amplifier IC Optimized For WiMAX: RF5632 - Datasheet
