Product/Service
High-Power GaN Power ICs (PICs)
Source: RF Micro Devices, Inc.
RFMD's GaN Power ICs (PICs) are wideband power amplifiers designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and power over a large instantaneous bandwidth in a single amplifier design. These GaN discrete amplifiers are 50O input-matched packaged in a small form factor 5 x 6mm SOIC-8 outline air cavity ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
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•Datasheet: High-Power GaN Power ICs (PICs)
•Datasheet: High-Power GaN Power ICs (PICs)
•Datasheet: High-Power GaN Power ICs (PICs)
Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
FEATURES
- Advanced GaN HEMT technology
- Advanced heat sink technology
- Input internally matched to 50Ω
- High power added efficiency
- -40°C to 85°C operating temperature
- Wide instantaneous bandwidth
- Large signal models available
- EAR99 export control
•Datasheet: High-Power GaN Power ICs (PICs)
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