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GaAs Driver Amps

Two +3 VDC GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) driver amplifiers have been developed for cellular and PCS handset designs.
Details

Two +3 VDC GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) driver amplifiers have been developed for cellular and PCS handset designs.

The RF2324 is a CDMA/TDMA PA driver amp targeted at the transmit section of PCS systems operating in the 1880 MHz range. This amplifier features 22 dB typical gain when running from +3 VDC supplies, 2.5 dB gain typical when operating at +3 VDC, a +28 dBm output third-order-intercept (IP3) point, 36 dB typical isolation, 2.0:1 maximum input and output VSWR, and a +16 dB 1-dB compression point.

The RF2347 driver amplifier is specifically designed for the transmit section of digital cellular handsets working in the 830 MHz range. This amplifier features 20.5 dB typical gain, a +28.5 dBm typical IP3, a 2 dB maximum noise figure, a 2.0:1 maximum input and output VSWR, 26 dB reverse isolation, and a +2.5 to +6 VDC operating supply range.

Both driver amplifiers sport an on-board power-down feature that can be used to turn the device off completely. In addition, both are supplied in 8-pin MSOP packages.


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RF Micro Devices, Inc.

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