Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today expanded its 5G beamformer IC family with two new dual-polarization mmWave devices optimized for 2x2 antenna architecture for 5G and broadband wireless applications with best-in-class performance at n257, n258, and 261 bands. The highly integrated F5288 and F5268 transmitter/receiver (8T8R) chipsets sit on a small 5.1mm x 5.1mm BGA package and feature the industry’s highest Tx output power capability in silicon – delivering more than 15.5dBm linear output power (note 1) per channel. With this combination, Renesas enables cost-efficient radio design with extended signal reach for wireless infrastructure applications including wide-area, small cell and macro base stations, as well as CPE, fixed wireless access (FWA) access points, and various other applications.
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Third-Generation 5G mmWave Beamformers with Industry-Leading Tx Output Power (Photo: Business Wire)
The new F5288 and F5268 ICs feature a unique Dynamic Array Power (DAP) technology that enables high-efficiency operation at linear output power levels programmable from 10 dBm up to 16 dBm. This makes the third-generation ICs ideal for use in mobile and fixed wireless applications with a wide range of output power requirements. This flexibility allows communications customers to reduce design times by repurposing their antenna array designs across different applications.
“Adequate signal range – or lack thereof – remains the biggest challenge as the industry shifts to 5G mmWave technologies for both urban and suburban mobile and fixed wireless networks,” said Naveen Yanduru, Vice President of RF Communications Product Division at Renesas. “Renesas’ new beamformer ICs are a game changer for this evolving market, offering small, integrated beamforming solutions with high output power that enable communications customers to implement cost-effective basestation and FWA designs for long-range wireless applications.”
About the F5288 and F5268 5G mmWave Beamforming ICs
Renesas’ third-generation mmWave beamformer ICs address all the beamforming capabilities required by 5G systems while achieving the highest linear RF output power in any silicon technology with high efficiency.
The ICs’ dual-polarization 8-channel architecture provides a highly symmetric and very low loss antenna routing network to improve overall antenna efficiency and reduce board costs. The exposed die package allows for more efficient thermal management at the board with improved heat dissipation through the back of the IC. In addition, Renesas designed the package pinmap to simplify board design and reduce design risks. Lower complexity PCB design with minimum layer counts results in reduced board costs and faster time to market.
The F5288 and F5268 ICs also feature several of Renesas’ state-of-the-art technologies to enhance array-level performance. Dynamic Array Power technology allows for a graceful scaling of output power with high efficiency. ArraySense technology with comprehensive on-chip sensor network allows users to monitor IC performance in array operation and apply critical corrections real-time. RapidBeam advanced digital control technology enables simultaneous synchronous and asynchronous control of several beamformer ICs to achieve extremely fast beamsteering operations.
Additional features include
- 26.5GHz – 29.5GHz (F5288) and 24.25GHz – 27.5GHz (F5268) operation
- Advanced temperature compensation techniques to minimize RF performance degradation with varying temperatures
- State-of-the-art phase and gain control including 360° phase control range with true 6-bit resolution and up to 31.5dB gain control with 0.5dB steps
- Improved Rx linearity modes to provide additional flexibility for the receiver lineup
- Rx noise figures as low as ~4.5dB at room temperature and under 5.5dB at temperatures up to 95°C
To further simplify system design, customers can leverage Renesas’ new Base Station Antenna Front End Winning Combination, which features the new F5288 and F5268 beamformer ICs along with the company’s F5728 up/down converters, 8V97003 wideband mmWave synthesizer, and a variety of Renesas PMIC devices. Renesas offers over 250 Winning Combinations featuring complementary analog, power, timing devices, and embedded processing to provide an easy-to-use architecture, simplify the design process, and significantly reduce design risk for customers in a wide variety of applications. For more on this and additional Renesas solutions, go to renesas.com/win.
The F5288 and F5268 beamformer ICs and evaluation systems are available now. More information is available at renesas.com/5G.
About Renesas Electronics Corporation
Renesas Electronics Corporation (TSE: 6723) delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live. A global leader in microcontrollers, analog, power, and SoC products, Renesas provides comprehensive solutions for a broad range of automotive, industrial, Infrastructure, and IoT applications that help shape a limitless future. Learn more at renesas.com. Follow us on LinkedIn, Facebook, Twitter, YouTube and Instagram.
(Note 1) Linear output power level defined at EVM<3% using a 400MHz 5GNR CP-OFDM waveform with 120kHz sub-carrier spacing and 11.7dB PAR.
(Remarks). Dynamic Array Power, ArraySense, and RapidBeam are trademarks of Renesas Electronics Corporation. All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.
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