News | August 18, 2014

New GaN Power Amp Offers High Power, High Linearity, Excellent Efficiency


Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD216, a new 14-18 GHz GaN power amplifier in die form, to their expanding product line.  

The CMD216 delivers 16 dB of flat gain across the entire 14 to 18 GHz bandwidth, an output 1 dB compression point of +37 dBm, and a saturated output power of +38 dBm. The CMD216 requires a bias of Vdd = 28 V, 550 mA, and Vgg = -3.4 V. Additionally, the amplifier boasts a power added efficiency of 32% or greater.  

The CMD216 is a fully matched 50 ohm matched design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection. The CMD216 is ideally suited for Ku-band communications systems. 

To download the full datasheet on the CMD216 Power Amplifier, visit the Custom MMIC Product Library at

About Custom MMIC
Custom MMIC represents a new way of thinking about MMICs. Driven by customer challenges, the company offers both hands-on design through testing services, and a growing library of system-ready designs. They are experienced in GaAs, GaN, SiC, InP, and InGaP HBT and have established relationships with the leading foundries in these technologies. They specialize in RF through millimeter-wave circuits for satellite communications, radar systems, cellular infrastructure, consumer electronics, VSAT, and point-to-point radio systems. For more information, visit