MTT-S—WJ Unveils GaAs FETs for Cellular/PCS Applications

Palo Alto, CA-based Watkins-Johnson (WJ) announced that its Wireless Products Group (WPG) introduced two new transistors based on GaAs MESFET technology to complement its expanding range of GaAs RFIC products. Produced at WJ's GaAs and Thin Film facility in Milpitas, Calif., the new GaAs FETs are on display at this week's MTT-S show.

The FH1 and FHF1 high dynamic range transistors are targeted for sophisticated RF/wireless designers who want maximum circuit performance by designing with discrete RF building blocks.

The FH1 operates from a +2.7 to +5 VDC power supply and delivers a +42 dBm output third-order intercept (IP3) point, a 1.2 dB noise figure, 18 dB gain, and a DC to 3 GHz frequency range. Housed in an SOT-89 package, this transistor is well suited for cellular and PCS handset designs.

The FHF1 also operates from a +2.7 to +5 VDC power supply. In contrast to the FH1, however, this transistor sports a +39 dBm output IP3, a 2.4 dB noise figure, 12 dB gain, and a 3 to 6 GHz frequency range. It is housed in an SOT-89 package and is an ideal general-purpose amplifier or mixer for wireless local loop (WLL) or wireless local-area network (WLAN) designs.

Both components are available from immediately. Pricing information can be obtained from WJ at 800-951-4401 in the US or +44-125-266-1761 in the UK.