Model-Based GaN PA Design Basics: GaN Transistor S-Parameters, Linear Stability Analysis And Resistive Stabilization

S-parameter matching is used to maximize gain and gain flatness in simple linear RF/microwave amplifier designs. This same S-parameter data is used to develop matching networks that address amplifier stability. This paper discusses the importance of using modeling for basic S-parameter and stability analyses in the gallium nitride (GaN) power amplifier (PA) design process. It also focuses attention on a simple two-port stability analysis derived from linear S-parameter calculations. The nonlinear Qorvo GaN power transistor model from the Modelithics Qorvo GaN Library, in combination with simulation templates and Keysight Advanced Design System (ADS) software. Download the full paper for more information.

This article was originally posted to Qorvo's site.