Products and Services
RSS
SXA-3318B 400-2500 MHz 1/2 W Medium Power GaAs HBT Amplifier with Active Bias
RF Micro Devices, Inc.
Sirenza Microdevices' SXA-3318B amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in a low-cost surface-mountable plastic
package.
Sirenza Microdevices' SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
Product Features
- On-Chip Active Bias Control
- High OIP3: +47.0dBm typ.
- High P1dB: +28.0dBm typ.
- High Gain: +17.5dB at 850MHz
- Patented High Reliabilty GaAs HBT Technology
- Lower Thermal Resistance for Increased MTTF
Product Applications
- W-CDMA, PCS, Cellular Systems
- Multi-Carrier Applications
- High Linearity IF Amplifiers
Click here to download the product datasheet
