Products and Services
SHF-0589 0.05-3 GHz, 2 Watt GaAs HFET
Source:
RF Micro Devices, Inc.
Sirenza Microdevices' SHF-0589 is a high performance AlGaAs/
GaAs Heterostructure FET (HFET) housed in a low-cost surface-
mount plastic package.
Downloads:
•Datasheet: SHF-0589 0.05-3 GHz, 2 Watt GaAs HFET
•Datasheet: SHF-0589 0.05-3 GHz, 2 Watt GaAs HFET
•Datasheet: SHF-0589 0.05-3 GHz, 2 Watt GaAs HFET
Sirenza Microdevices' SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface- mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
Product Features
- High Linearity Performance at 1.96 GHz
- +33.4dBm P1dB
- +46.5dBm OIP3
- +26.0dBm IS-95 Channel Power
- +11.5dB Gain
- +23.7dBm W-CDMA Channel Power
- High Drain Efficiency (>50 percent at P1dB)
- Recommended Bias Condition: Vds=7V, Idq=345mA
Product Applications
- Optical Receiver Modules
- 10.3 Gb/s Ethernet
- XFP, XENPACK, XPAK Modules, ROSA
- 12.5 Gb/s SONET with FEC
- 10.7 Gb/s SONET OC-192/SDH STM-64
Downloads:
•Datasheet: SHF-0589 0.05-3 GHz, 2 Watt GaAs HFET
Need More Information? Just Ask.
Click the button below to directly contact the supplier. Use it to:
- Ask a question.
- Request more detailed information or literature.
- Discuss your current project/application.
- Request a quote.
- Locate a distributor in your area.
- Schedule a demo.
