Products and Services
SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET
Source:
RF Micro Devices, Inc.
Sirenza Microdevices' SHF-0289 is a high performance AlGaAs/
GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount
plastic package.
Downloads:
•Datasheet: SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET
•Datasheet: SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET
•Datasheet: SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET
Sirenza Microdevices' SHF-0289 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
Product Features
- High Linearity Performance at 1.96 GHz
- +30.0dBm P1dB
- +43.0dBm OIP3
- +23.7dBm IS-95 Channel Power
- +14.6dB Gain
- +21.7dBm W-CDMA Channel Power
- High Drain Efficiency (>50 percent at P1dB)
- See App Note AN-032 for Circuit Details
- Recommended Bias Condition: Vds=7V, Idq=200mA
Product Applications
- Analog and Digital Wireless System
- 3G, Cellular, PCS
- Fixed Wireless, Pager Systems
Downloads:
•Datasheet: SHF-0289 0.05-6 GHz, 1 Watt GaAs HFET
Need More Information? Just Ask.
Click the button below to directly contact the supplier. Use it to:
- Ask a question.
- Request more detailed information or literature.
- Discuss your current project/application.
- Request a quote.
- Locate a distributor in your area.
- Schedule a demo.
