Products and Services
SGB-4333 DC-3.0 GHz SiGe HBT Gain Block With Active Bias
Source:
RF Micro Devices, Inc.
Sirenza Microdevices' SGB-4333 is a high performance
SiGe HBT MMIC amplifier utilizing a Darlington configuration
with an active bias network
Sirenza Microdevices' SGB-4333 is a high performance
SiGe HBT MMIC amplifier utilizing a Darlington configuration
with an active bias network. The active bias network
provides stable current over temperature and process Beta
variations. Designed to run directly from a 3V to 5V supply
the SGB-4333 does not require a drop resistor as compared
to typical Darlington amplifiers. This robust amplifier
features a Class 1C ESD rating, low thermal resistance ,
and unconditional stability. The SGB-4333 product is
designed for high linearity 3V gain block applications that
require small size and minimal external components. It is
on chip matched to 50 ohm and an external bias inductor
choke is required for the application band.
Product Features
- On-Chip Active Bias Control
- No Drop Resistor Required
- 3 x 3 QFN 16 Pin Package
- IP3: +22.5 dBm @ 1950 MHz
- Gain: +14.5 dB @ 1950 MHz
- Robust Class 1C ESD Rating
- 3v Applications
- LO Buffer Amplifier
- RF Pre-driver Stage
- RF Receiver Amplifier Stage
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