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LX5510 WLAN Power Amplifier
Microsemi CorporationThe LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching...
•Datasheet: LX5510 WLAN Power Amplifier
The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 120mA total DC current with the nominal 3.3V bias. With increased bias of 4.5V EVM is ~ 5% at 23dBm.
The LX5510 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5510 an ideal solution for medium-gain power amplifier requirements for IEEE 802.11b/g applications
Key Features
- Advanced InGaP HBT
- 2.4 – 2.5GHz Operation
- Single-Polarity 3.3V Supply
- Low Quiescent Current Icq ~65mA
- Power Gain ~20dB @ 2.45GHz and Pout = 19dBm
- Total Current 125mA for Pout = 19dBm @ 2.45GHz OFDM
- EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm
- Small Footprint (3 x 3 mm2)
- Low Profile (0.9mm)
Applications
- IEEE 802.11b/g
Downloads:
•Datasheet: LX5510 WLAN Power Amplifier
