Products and Services
Dual-Bank Flash Memory Devices
A distinguishing feature of the devices is that data can be read from either bank while an Erase or Program operation is in progress in the opposite bank. For added design flexibility, the flash memory is partitioned into 4 Mbit and 12 Mbit banks with top or bottom sector protection options for storing critical boot codes and configuration data. The devices are less susceptible to the effects of electromagnetic interference (EMI) and have a higher tolerance to the overall system's output of EMI. They offer a typical low standby current of only 6 microamperes, resulting in an extension in battery life.
The devices are designed to reduce space by replacing as many as three individual components (flash, SRAM and EEPROM) in traditional cellular phone applications. They incorporate the SoftPartition architecture, which allows system designers to seamlessly partition the data and program code into small, granular 1 KWord sectors.
Key Features:
Dual-Bank Architecture for Concurrent Read and Write Operation
Single 2.7-3.3V Read and Write Operation
Dual-Bank Architecture for Concurrent Read and Write Operation
1 KWord sector erase capability
Low Power Consumption
Fast Sector Erase and Word Program
Fast Chip Rewrite Time
Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086. Tel: 408-735-9110; Fax: 408-523-7757.

