RFMW Introduces 35W GaN Transistor From TriQuint Semiconductor
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC – 3.5GHz GaN transistor offering up to 37W P3dB. Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors. Linear gain is >16dB. The T1G4003532-FL uses a 32V supply and only 150mA of current. Overall efficiency is >53%. The –FL flange package offers low thermal resistance and is easily bolted down. Also available is an earless package in the T1G4003532-FS. Both transistors are ideal for military and civilian radar, jammers and communications systems where high gain and high efficiency are required. The T1G4003532-FL is available from stock at RFMW, Ltd.
T1G4003532-FL: Flanged Package, 35W, 32V, DC-3.5GHz GaN RF Power Transistor
T1G4003532-FS: Earless Package, 35W, 32V, DC-3.5GHz GaN RF Power Transistor
About RFMW, Ltd.:
RFMW Ltd. is a specialty electronics Distribution Company focused exclusively on serving customers that require RF and microwave components and semiconductors, as well as component engineering support. The company continues to expand its list of products from selective suppliers with RF/microwave expertise. RFMW deploys a highly experienced, skilled and technically competent team to assist customers with component selection and fulfillment. For more information, visit www.rfmw.com
SOURCE: RFMW Ltd.