Designing A 5W X-Band Amplifier Using An SMT Packaged Transistor

By Plextek RFI

Gallium nitride (GaN) discrete transistors have a high breakdown voltage and a high junction temperature that makes them well suited for realizing high-power amplifiers. When these transistors are offered in low-cost over-molded SMT plastic packages, product handling and assembly are greatly simplified and costs are significantly reduced. This white paper describes the design of a single stage 5W X-band GaN power amplifier by using a low-cost SMT packaged transistor. Download the full paper for an example of how the TGF2977-SM can realize excellent X-band performance.