06.21.12 -- 2 To 1 Signal To Channel Wireless Breakthrough
GaN Switches Enable Hot Switching At Higher Power By RF Micro Devices, Inc.
This article discusses the benefits of GaN HEMT-based switches for applications involving low power and high speed. Higher power handling, ruggedness capability, and excellent insertion loss and isolation over an ultra wide band are just a few of the benefits of GaN Switches.
The LNFA1X4 low-noise, filtered, amplified GPS Splitter is a one-input, four-output device with 0 dB nominal gain. The device features a low noise input section to establish an overall system noise figure.