180 Watt GaN Matched Power Transistor (MPT) - RFG1M09180

The RFG1M09180 is part of RFMD's RFG1M series of products. Each RFG1M product features an internally matched design optimized for high-efficiency operation and each is suited for high peak-to-average ratio (PAR) modulation schemes. Of note, RFMD's RFG1M products feature wide bandwidth designs, thereby enabling cost- and energy-efficient support of multi-standard base stations, such as multi-band GSM and LTE applications ranging from 0.7 GHz to 1.0 GHz.

The RFG1M09180 is part of RFMD's RFG1M series of products. Each RFG1M product features an internally matched design optimized for high-efficiency operation and each is suited for high peak-to-average ratio (PAR) modulation schemes. Of note, RFMD's RFG1M products feature wide bandwidth designs, thereby enabling cost- and energy-efficient support of multi-standard base stations, such as multi-band GSM and LTE applications ranging from 0.7 GHz to 1.0 GHz.

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•Datasheet: 180 Watt GaN Matched Power Transistor (MPT) - RFG1M09180
•Video: RFMD High-Power, High-Efficiency GaN Doherty Demo