GlobeNewswire Press

61. RFMD® Announces Major Gallium Nitride (GaN) Milestones
    11/18/2009
    RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced that RFMD® has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications.
62. ZTE Selects RFMD® To Support High Volume S305 Handset
    10/23/2009
    RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced ZTE has selected two of RFMD's dual-band transmit modules to support ZTE's S305 GSM handset.
63. RFMD® Secures Multiple Design Wins For GPS LNA Module
    10/16/2009
    RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced RFMD has secured multiple high-volume design wins for its RF2815 GPS LNA module.
64. LTX-Credence Announces Unisem's Selection Of X-Series For RF Test
    9/29/2009
    LTX-Credence Corporation (Nasdaq:LTXC), a global provider of focused, cost-optimized ATE solutions, today announced that Unisem, a global provider of semiconductor assembly and test services, has selected the X-Series for volume production testing of a wide range of RF devices including power amplifiers, transceivers, and integrated RF SOC devices
65. Microsemi Extends Its New Radiation Hardened Transistor Product Line
    9/9/2009
    Microsemi Corporation, a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, announced today that DSCC qualification has been granted on their JANSR2N3439 and JANSR2N3440 radiation hardened medium power transistors.
66. RFMD And U.S. Department Of Energy's National Renewable Energy Laboratory Announce Collaboration
    7/2/2009
    RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced it has entered into a cooperative agreement with the U.S. Department of Energy's National Renewable Energy Laboratory (NREL) to develop a commercially viable and high volume-capable compound semiconductor-based process for high-performance photovoltaic (PV) cells.
67. RFMD® Introduces Highly Integrated, Multi-Use VCO For Military, Satcom, And Industrial Markets
    6/26/2009
    RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today introduced the RFVC1800 -- a broadband voltage control oscillator (VCO) targeting multiple radio frequency (RF) markets.
68. Microsemi Introduces Two New RF MOSFET Transistor Products Operating At 175MHz And 100MHz
    6/25/2009
    Microsemi Corporation has introduced two new RF MOSFET power transistor products capable of operating at up to 175MHz and 100MHz for their targeted applications...
69. RFMD(R) Introduces Family Of Multi-Use Distributed Amplifiers For Broadband, High-Frequency Applications
    6/22/2009
    RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the addition of five new distributed amplifiers for broadband, high-frequency applications.
70. RFMD® Announces Availability Of Gallium Nitride (GaN) Foundry Services
    6/12/2009
    RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the Company has formed a gallium nitride (GaN) Foundry Services business unit to supply high-reliability, high-performance and price-competitive GaN semiconductor technology into multiple RF power markets